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quality Fast Switching N Channel MOSFET HUASHUO HSY012N10 Featuring Low RDS ON and High Cell Density SGT MOS factory
quality Fast Switching N Channel MOSFET HUASHUO HSY012N10 Featuring Low RDS ON and High Cell Density SGT MOS factory
quality Fast Switching N Channel MOSFET HUASHUO HSY012N10 Featuring Low RDS ON and High Cell Density SGT MOS factory
quality Fast Switching N Channel MOSFET HUASHUO HSY012N10 Featuring Low RDS ON and High Cell Density SGT MOS factory

Fast Switching N Channel MOSFET HUASHUO HSY012N10 Featuring Low RDS ON and High Cell Density SGT MOS

Key Attributes
Model Number: HSY012N10
Product Custom Attributes
Mfr. Part #:
HSY012N10
Package:
TOLL-8
Product Description

Product Overview

The HSY012N10 is a N-Channel 100V Fast Switching MOSFET designed for high-performance applications. Featuring super low RDS(ON) and advanced high cell density SGT MOS technology, this MOSFET offers guaranteed 100% EAS performance. It is ideal for use in motor drivers, UPS systems, power tools, and synchronous rectification in SMPS. Available as a Green Device.

Product Attributes

  • Brand: HS-Semi
  • Model: HSY012N10
  • Technology: Advanced high cell density SGT MOS
  • Certifications: Green Device Available

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1,6 300 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1,6 265 A
IDM Pulsed Drain Current2 1200 A
EAS Single Pulse Avalanche Energy3 2800 mJ
PD@TC=25 Total Power Dissipation4 500 W
TSTG Storage Temperature Range -55 175
TJ Operating Junction Temperature Range -55 175
Thermal Data
RJA Thermal Resistance Junction-Ambient --- 40 /W
RJC Thermal Resistance Junction-Case1 --- 0.25 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=50A 1.25 1.7 m
VGS=6V , ID=50A 2.2 4 V
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.0 3.0 4.0 V
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25 --- 1 uA
VDS=80V , VGS=0V , TJ=125 --- 100
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- ±100 nA
Qg Total Gate Charge (10V) VDS=50V , VGS=10V , ID=50A 160 --- nC
Qgs Gate-Source Charge 70 ---
Qgd Gate-Drain Charge 60 ---
Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=4.5, RL=1,ID=50A 40 --- ns
Tr Rise Time 128 ---
Td(off) Turn-Off Delay Time 150 ---
Tf Fall Time 118 ---
Ciss Input Capacitance VDS=50V , VGS=0V , f=1MHz 11370 --- pF
Coss Output Capacitance 1720 ---
Crss Reverse Transfer Capacitance 188 ---
Diode Characteristics
VSD Diode Forward Voltage2 VGS=0V , IS=50A , TJ=25 --- 1.1 V
Part Number Package Code Packaging Quantity
HSY012N10 TOLL 2000/Tape&Reel

2512261650_HUASHUO-HSY012N10_C53244082.pdf

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