Low Rds on and Fast Switching N Channel MOSFET HUASHUO HSCB0012 100V Suitable for Portable Devices
Key Attributes
Model Number:
HSCB0012
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3A
RDS(on):
130mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
31pF
Number:
1 N-channel
Output Capacitance(Coss):
180pF
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
3W
Gate Charge(Qg):
3.5nC@10V
Mfr. Part #:
HSCB0012
Package:
DFN-6L(2x2)
Product Description
Product Overview
The HSCB0012 is an N-Channel 100V Fast Switching MOSFET designed with Advanced Trench MOS Technology. It offers low Rds(on) and super low gate charge, making it suitable for applications requiring high speed and efficiency. This device is 100% EAS Guaranteed and available in a Green Device option. Key applications include portable equipment, battery-powered systems, and hard switching and high-speed circuits.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced Trench MOS
- Compliance: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V | 3 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V | 2.1 | A | |||
| IDM | Pulsed Drain Current | 12 | A | |||
| IAS | Avalanche Current | 2.1 | A | |||
| PD@TA=25 | Total Power Dissipation | 3 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-ambient | 1 | 120 | /W | ||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | V | ||
| RDS(ON),max | Static Drain-Source On-Resistance | VGS=10V , ID=2A | 90 | 100 | m | |
| RDS(ON),max | Static Drain-Source On-Resistance | VGS=4.5V , ID=2A | 115 | 130 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.3 | V |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=55 | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 5 | |||
| Qg | Total Gate Charge | VDS=50V , VGS=10V , ID=2A | 3.5 | nC | ||
| Qgs | Gate-Source Charge | 0.7 | nC | |||
| Qgd | Gate-Drain Charge | 0.9 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=50V , VGS=10V , RG=3 ID=1A | 4.8 | ns | ||
| Tr | Rise Time | 19 | ns | |||
| Td(off) | Turn-Off Delay Time | 17 | ns | |||
| Tf | Fall Time | 6.2 | ns | |||
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | 180 | pF | ||
| Coss | Output Capacitance | 31 | pF | |||
| Crss | Reverse Transfer Capacitance | 2.5 | pF | |||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 3 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | 1.2 | V |
Note: 1. Data tested on a 1 inch FR-4 board with 2OZ copper. 2. Data tested by pulsed, pulse width 300s, duty cycle 2%. 3. EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.1mH, IAS=2.1A. 4. Power dissipation limited by 150 junction temperature. 5. Data theoretically same as ID and IDM, should be limited by total power dissipation in real applications.
2411061706_HUASHUO-HSCB0012_C42376790.pdf
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