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quality High Cell Density Complementary MOSFET HUASHUO HSBA6901 Series with Low RDS ON and Power Conversion factory
quality High Cell Density Complementary MOSFET HUASHUO HSBA6901 Series with Low RDS ON and Power Conversion factory

High Cell Density Complementary MOSFET HUASHUO HSBA6901 Series with Low RDS ON and Power Conversion

Key Attributes
Model Number: HSBA6901
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
23A;18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@10V,18A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
64pF@15V;70pF@15V
Number:
1 N-Channel + 1 P-Channel
Pd - Power Dissipation:
42W
Input Capacitance(Ciss):
1.378nF@15V;1.447nF@15V
Gate Charge(Qg):
12.56nC@4.5V;9.86nC@4.5V
Mfr. Part #:
HSBA6901
Package:
PRPAK5x6-8L
Product Description

Product Overview

The HSBA6901 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for most synchronous buck converter applications. The HSBA6901 series meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full functional reliability approval. Key advantages include super low gate charge and excellent decline in Cdv/dt effect, attributed to advanced high cell density Trench technology.

Product Attributes

  • Brand: HS-Semi
  • Technology: Advanced high cell density Trench technology
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS guaranteed, Full function reliability approved

Technical Specifications

Model Parameter Conditions Min. Typ. Max. Units
HSBA6901 (N-Channel) VDS (Drain-Source Voltage) 60 V
VGS (Gate-Source Voltage) ±20 V
ID@TC=25 (Continuous Drain Current) VGS @ 10V1 23 A
ID@TC=100 (Continuous Drain Current) VGS @ 10V1 15 A
ID@TA=25 (Continuous Drain Current) VGS @ 10V1 5.6 A
ID@TA=70 (Continuous Drain Current) VGS @ 10V1 4.5 A
IDM (Pulsed Drain Current)2 46 A
EAS (Single Pulse Avalanche Energy)3 26.5 mJ
IAS (Avalanche Current) 23 A
PD@TC=25 (Total Power Dissipation)4 42 W
TSTG (Storage Temperature Range) -55 150
TJ (Operating Junction Temperature Range) -55 150
RJA (Thermal Resistance Junction-Ambient) --- 62 /W
RJC (Thermal Resistance Junction-Case)1 --- 3 /W
BVDSS (Drain-Source Breakdown Voltage) VGS=0V , ID=250uA 60 --- --- V
RDS(ON) (Static Drain-Source On-Resistance)2 VGS=10V , ID=15A --- --- 32 mΩ
HSBA6901 (P-Channel) VDS (Drain-Source Voltage) -60 V
VGS (Gate-Source Voltage) ±20 V
ID@TC=25 (Continuous Drain Current) VGS @ 10V1 -18 A
ID@TC=100 (Continuous Drain Current) VGS @ 10V1 -11 A
ID@TA=25 (Continuous Drain Current) VGS @ 10V1 -4.3 A
ID@TA=70 (Continuous Drain Current) VGS @ 10V1 -3.5 A
IDM (Pulsed Drain Current)2 -36 A
EAS (Single Pulse Avalanche Energy)3 39.2 mJ
IAS (Avalanche Current) -28 A
PD@TC=25 (Total Power Dissipation)4 42 W
TSTG (Storage Temperature Range) -55 150
TJ (Operating Junction Temperature Range) -55 150
RJA (Thermal Resistance Junction-Ambient) --- 62 /W
RJC (Thermal Resistance Junction-Case)1 --- 3 /W
BVDSS (Drain-Source Breakdown Voltage) VGS=0V , ID=-250uA -60 --- --- V
RDS(ON) (Static Drain-Source On-Resistance)2 VGS=-10V , ID=-12A --- --- 70 mΩ

Notes:

  • 1 Tested on a 1 inch2 FR-4 board with 2OZ copper.
  • 2 Tested with pulse width ≤ 300µs, duty cycle ≤ 2%.
  • 3 EAS data shows Max. rating. Test condition: VDD=25V (N-Ch) / -25V (P-Ch), VGS=10V / -10V, L=0.1mH, IAS=23A / -28A.
  • 4 Power dissipation is limited by 150 junction temperature.
  • 5 IS and ISM data is theoretically the same as ID and IDM, but should be limited by total power dissipation in real applications.

2410121456_HUASHUO-HSBA6901_C5341694.pdf
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