Single N Channel Enhancement Mode MOSFET HYG025N04NR1C2 with 170 Amp Current and Halogen Free Options
Key Attributes
Model Number:
HYG025N04NR1C2
Product Custom Attributes
Mfr. Part #:
HYG025N04NR1C2
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The HYG025N04NR1C2 is a single N-Channel enhancement mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON) = 1.7 m typ. @VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Halogen-free options are available. This MOSFET is suitable for load switch and battery protection applications.
Product Attributes
- Brand: HYG (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Material: MOSFET
- Certifications: RoHS compliant, Halogen-free options available
Technical Specifications
| Model | Feature | RDS(ON) (typ.) @VGS = 10V | VDSS | ID (Tc=25) | Application |
| HYG025N04NR1C2 | Single N-Channel Enhancement Mode MOSFET, 100% Avalanche Tested, Reliable and Rugged | 1.7 m | 40 V | 170 A | Load Switch, Battery Protection |
2507311924_HUAYI-HYG025N04NR1C2_C44176640.pdf
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