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quality High Cell Density Trenched N Channel MOSFET HUASHUO HSU3018B Designed for Fast Switching Applications factory
quality High Cell Density Trenched N Channel MOSFET HUASHUO HSU3018B Designed for Fast Switching Applications factory

High Cell Density Trenched N Channel MOSFET HUASHUO HSU3018B Designed for Fast Switching Applications

Key Attributes
Model Number: HSU3018B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
225pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
4.345nF@15V
Pd - Power Dissipation:
60W
Gate Charge(Qg):
56.9nC@4.5V
Mfr. Part #:
HSU3018B
Package:
TO-252
Product Description

Product Overview

The HSU3018B is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Ch Fast Switching MOSFETs
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V 110 A
ID@TC=100 Continuous Drain Current, VGS @ 10V 54 A
IDM Pulsed Drain Current 280 A
EAS Single Pulse Avalanche Energy 180 mJ
IAS Avalanche Current 60 A
PD@TC=25 Total Power Dissipation 60 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-Ambient 62 /W
RJC Thermal Resistance Junction-Case 2 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 V
RDS(ON),max Static Drain-Source On-Resistance VGS=10V , ID=30A 2 2.4 m
RDS(ON),max Static Drain-Source On-Resistance VGS=4.5V , ID=15A 2.6 3.2 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 2.5 V
IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25 1 uA
IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=55 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V 100 nA
gfs Forward Transconductance VDS=5V , ID=30A 50 S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 1.7
Qg Total Gate Charge VDS=15V , VGS=10V , ID=15A 56.9 nC
Qgs Gate-Source Charge 13.8 nC
Qgd Gate-Drain Charge 23.5 nC
Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3, ID=1A 20.1 ns
Tr Rise Time 6.3 ns
Td(off) Turn-Off Delay Time 124.6 ns
Tf Fall Time 15.8 ns
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz 4345 pF
Coss Output Capacitance 340 pF
Crss Reverse Transfer Capacitance 225 pF
IS Continuous Source Current VG=VD=0V , Force Current 70 A
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25 1.2 V

2410121642_HUASHUO-HSU3018B_C701002.pdf

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