Low RDS ON N Channel Enhancement Mode MOSFET HYG060N15NS1P for Power Switching Applications 150V 175A
Key Attributes
Model Number:
HYG060N15NS1P
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
175A
RDS(on):
5.5mΩ@10V,100A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
79.6pF
Number:
1 N-channel
Pd - Power Dissipation:
375W
Input Capacitance(Ciss):
5.352nF
Mfr. Part #:
HYG060N15NS1P
Package:
TO-220FB-3L
Product Description
Product Overview
The HYG060N15NS1P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a low RDS(ON) of 5.5m (typ.) at VGS = 10V, 150V/175A rating, and is 100% avalanche tested for reliability. Available in lead-free and green (RoHS compliant) versions, it is suitable for Uninterruptible Power Supply and Motor Control systems.
Product Attributes
- Brand: Hymexa
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, J-STD-020
Technical Specifications
| Model | Feature | RDS(ON) (typ.) @ VGS=10V | VDSS | ID (Tc=25C) | Package |
| HYG060N15NS1P/B | N-Channel Enhancement Mode MOSFET, 100% Avalanche Tested, Reliable and Rugged | 5.5m | 150V | 175A | TO-220FB-3L / TO-263-2L |
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | |||||
| VDSS | Drain-Source Voltage | - | - | 150 | V |
| VGSS | Gate-Source Voltage | - | - | ±20 | V |
| TJ | Maximum Junction Temperature | -55 | - | 175 | °C |
| TSTG | Storage Temperature Range | -55 | - | 175 | °C |
| IS | Source Current-Continuous (Body Diode) Tc=25°C | - | - | 175 | A |
| IDM | Pulsed Drain Current Tc=25°C | - | - | 570 | A |
| ID | Continuous Drain Current Tc=25°C | - | - | 175 | A |
| ID | Continuous Drain Current Tc=100°C | - | - | 123 | A |
| PD | Maximum Power Dissipation Tc=25°C | - | - | 375 | W |
| PD | Maximum Power Dissipation Tc=100°C | - | - | 187.5 | W |
| RθJC | Thermal Resistance, Junction-to-Case | - | 0.4 | - | °C/W |
| RθJA | Thermal Resistance, Junction-to-Ambient | - | 62 | - | °C/W |
| EAS | Single Pulsed-Avalanche Energy L=0.3mH | - | 743.2 | - | mJ |
| Electrical Characteristics | |||||
| BVDSS | Drain-Source Breakdown Voltage VGS=0V,IDS=250μA | 150 | - | - | V |
| IDSS | Drain-to-Source Leakage Current VDS=150V,VGS=0V | - | - | 1.0 | μA |
| IDSS | Drain-to-Source Leakage Current TJ=125°C | - | - | 50 | μA |
| VGS(th) | Gate Threshold Voltage VDS=VGS, IDS=250μA | 2 | 3 | 4 | V |
| IGSS | Gate-Source Leakage Current VGS=±20V,VDS=0V | - | - | ±100 | nA |
| RDS(ON) | Drain-Source On-State Resistance VGS=10V,IDS=100A | - | 5.5 | 6.8 | mΩ |
| VSD* | Diode Forward Voltage ISD=100A,VGS=0V | - | 0.91 | 1.3 | V |
| trr | Reverse Recovery Time ISD=100A,dISD/dt=100A/μs | - | 112.9 | - | ns |
| Qrr | Reverse Recovery Charge | - | 362.3 | - | nC |
| Dynamic Characteristics | |||||
| RG | Gate Resistance VGS=0V,VDS=0V,F=1MHz | - | 4.5 | - | Ω |
| Ciss | Input Capacitance VGS=0V, VDS=25V, Frequency=1.0MHz | - | 5352 | - | pF |
| Coss | Output Capacitance | - | 3282 | - | pF |
| Crss | Reverse Transfer Capacitance | - | 79.6 | - | pF |
| td(ON) | Turn-on Delay Time VDD=75V,RG=2.5Ω, IDS=100A,VGS=10V | - | 17.6 | - | ns |
| Tr | Turn-on Rise Time | - | 108.7 | - | ns |
| td(OFF) | Turn-off Delay Time | - | 60.2 | - | ns |
| Tf | Turn-off Fall Time | - | 105.3 | - | ns |
| Gate Charge Characteristics | |||||
| Qg | Total Gate Charge VDS=120V, VGS=10V ID=100A | - | 83 | - | nC |
| Qgs | Gate-Source Charge | - | 31 | - | nC |
| Qgd | Gate-Drain Charge | - | 15 | - | nC |
2409302231_HUAYI-HYG060N15NS1P_C5121329.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
