30V Fast Switching P Channel MOSFET HUASHUO HSH3119 with Superior RDS ON and Gate Charge Performance
HSH3119 P-Channel 30V Fast Switching MOSFET
Product Overview
The HSH3119 is a high cell density trenched P-channel MOSFET designed for excellent RDS(ON) and gate charge performance in synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers full function reliability. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology, making it suitable for demanding power management solutions.
Product Attributes
- Brand: HS-Semi
- Model: HSH3119
- Technology: P-Channel MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1,6 | -150 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1,6 | -95 | A | |||
| IDM | Pulsed Drain Current2 | -510 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 1050 | mJ | |||
| IAS | Avalanche Current | -75 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 200 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient 1(Steady State) | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-case 1 | --- | 0.81 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-30A | 2.7 | 3.0 | m | |
| VGS=-4.5V , ID=-20A | 3.5 | 4.2 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | --- | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-30V , VGS=0V , TJ=25 | --- | -1 | uA | |
| VDS=-30V , VGS=0V , TJ=125 | --- | -100 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| Rg | Gate resistance | VDS=0V , VGS=0V , f=1MHz | 1.8 | |||
| Qg | Total Gate Charge (-10V) | VDS=-15V , VGS=-10V , ID=-20A | 22 | nC | ||
| Qgs | Gate-Source Charge | 2.2 | nC | |||
| Qgd | Gate-Drain Charge | 3.3 | nC | |||
| td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3, ID=-10A | 17 | ns | ||
| tr | Rise Time | 6 | ns | |||
| td(off) | Turn-Off Delay Time | 21 | ns | |||
| tf | Fall Time | 39 | ns | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 12700 | pF | ||
| Coss | Output Capacitance | 1380 | pF | |||
| Crss | Reverse Transfer Capacitance | 1210 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -150 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-20A , TJ=25 | --- | -1.2 | V | |
| trr | Reverse Recovery Time | IF=-20A , di/dt=100A/s , TJ=25 | 37 | nS | ||
| Qrr | Reverse Recovery Charge | 30 | nC | |||
Notes:
1. Data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. Data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. EAS data shows Max. rating. Test condition: VDD=-30V, VGS=-10V, L=0.5mH, IAS=-75A.
4. Power dissipation is limited by 150 junction temperature.
5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
6. Maximum current rating is package limited.
2410121628_HUASHUO-HSH3119_C22359318.pdf
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