High cell density N channel MOSFET HUASHUO HSBA8074A suitable for synchronous rectification circuits
Key Attributes
Model Number:
HSBA8074A
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.3mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.8V
Reverse Transfer Capacitance (Crss@Vds):
50pF@64V
Number:
1 N-channel
Input Capacitance(Ciss):
6.58nF@64V
Pd - Power Dissipation:
126W
Gate Charge(Qg):
104nC@10V
Mfr. Part #:
HSBA8074A
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA8074A is a high cell density N-channel MOSFET designed for fast switching and synchronous rectification applications. It offers excellent RDS(ON) and gate charge characteristics. This device is RoHS and Halogen-Free compliant, with 100% EAS guaranteed and full function reliability approved. It is suitable for applications requiring excellent CdV/dt effect decline and utilizes advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Halogen-Free
- Features: 100% EAS Guaranteed, Green Device Available, Super Low Gate Charge, Excellent CdV/dt effect decline
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 80 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V 1,6 | 100 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V 1,6 | 95 | A | |||
| IDM | Pulsed Drain Current 2 | 250 | A | |||
| EAS | Single Pulse Avalanche Energy 3 | 784 | mJ | |||
| IAS | Avalanche Current | 56 | A | |||
| PD@TC=25 | Total Power Dissipation 4 | 126 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient 1 | 55 | /W | |||
| RJC | Thermal Resistance Junction-Case 1 | 1 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 80 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance 2 | VGS=10V , ID=20A | 2.3 | 3 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 2 | 2.8 | 4 | V |
| IDSS | Drain-Source Leakage Current | VDS=64V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=64V , VGS=0V , TJ=55 | 5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.4 | |||
| Qg | Total Gate Charge (10V) | VDS=64V , VGS=10V , ID=20A | 104 | nC | ||
| Qgs | Gate-Source Charge | 24 | ||||
| Qgd | Gate-Drain Charge | 29 | ||||
| Td(on) | Turn-On Delay Time | VDD=40V , VGS=10V , RG=3, ID=20A | 22 | ns | ||
| Tr | Rise Time | 16 | ||||
| Td(off) | Turn-Off Delay Time | 51 | ||||
| Tf | Fall Time | 16 | ||||
| Ciss | Input Capacitance | VDS=45V , VGS=0V , f=1MHz | 6580 | pF | ||
| Coss | Output Capacitance | 1101 | ||||
| Crss | Reverse Transfer Capacitance | 50 | ||||
| Diode Characteristics | ||||||
| IS | Continuous Source Current 1,5 | VG=VD=0V , Force Current | 100 | A | ||
| VSD | Diode Forward Voltage 2 | VGS=0V , IS=A , TJ=25 | 1.2 | V | ||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSBA8074A | PRPAK5*6 | 3000/Tape&Reel | ||||
2410121655_HUASHUO-HSBA8074A_C5128205.pdf
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