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quality N Channel Enhancement Mode MOSFET HUAYI HYG028N10NS1W with 100V 240A Rating and Low On Resistance factory
quality N Channel Enhancement Mode MOSFET HUAYI HYG028N10NS1W with 100V 240A Rating and Low On Resistance factory

N Channel Enhancement Mode MOSFET HUAYI HYG028N10NS1W with 100V 240A Rating and Low On Resistance

Key Attributes
Model Number: HYG028N10NS1W
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
240A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
238pF
Output Capacitance(Coss):
3.618nF
Input Capacitance(Ciss):
9.946nF
Pd - Power Dissipation:
357.1W
Gate Charge(Qg):
168nC@10V
Mfr. Part #:
HYG028N10NS1W
Package:
TO-247A-3L
Product Description

Product Overview

The HYG028N10NS1W is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a 100V/240A rating, low on-resistance of 2.5m (typ.) at VGS = 10V, and is 100% avalanche tested for reliability. This device is available in Halogen-Free and Green (RoHS Compliant) versions, making it suitable for Uninterruptible Power Supply and Motor Control systems.

Product Attributes

  • Brand: HYG
  • Model: HYG028N10NS1W
  • Package: TO-247A-3L
  • Certifications: RoHS Compliant, Halogen-Free, Green Devices Available
  • Origin: China

Technical Specifications

ParameterSymbolTest ConditionsMinTyp.MaxUnit
Absolute Maximum Ratings
Drain-Source VoltageVDSSTc=25C Unless Otherwise Noted--100V
Gate-Source VoltageVGSS--±20±20V
Maximum Junction TemperatureTJ--55-175°C
Storage Temperature RangeTSTG--55-175°C
Source Current-Continuous (Body Diode)ISTc=25°C, Mounted on Large Heat Sink--240A
Pulsed Drain CurrentIDMTc=25°C *--740A
Continuous Drain CurrentIDTc=25°C--240A
Continuous Drain CurrentIDTc=100°C--169A
Maximum Power DissipationPDTc=25°C--357.1W
Maximum Power DissipationPDTc=100°C--178.5W
Thermal Resistance, Junction-to-CaseRθJC--0.42-°C/W
Thermal Resistance, Junction-to-AmbientRθJASurface mounted on FR-4 board. **--57°C/W
Single Pulsed-Avalanche EnergyEASL=0.3mH ***-1012.9-mJ
Electrical Characteristics (Tc =25°C Unless Otherwise Noted)
Drain-Source Breakdown VoltageBVDSSVGS=0V,IDS=250μA100--V
Drain-to-Source Leakage CurrentIDSSVDS=100V,VGS=0V--1.0μA
Drain-to-Source Leakage CurrentIDSSTJ=125°C--50μA
Gate Threshold VoltageVGS(th)VDS=VGS, IDS=250μA234V
Gate-Source Leakage CurrentIGSSVGS=±20V,VDS=0V--±100nA
Drain-Source On-State ResistanceRDS(ON)VGS=10V,IDS=50A-2.53.2mΩ
Diode Characteristics
Diode Forward VoltageVSD*ISD=50A,VGS=0V-0.861.3V
Reverse Recovery TimetrrISD=50A,dISD/dt=100A/μs-88-ns
Reverse Recovery ChargeQrr--215.2-nC
Dynamic Characteristics
Gate ResistanceRGVGS=0V,VDS=0V,F=1MHz-2.2-Ω
Input CapacitanceCissVGS=0V, VDS=25V, Frequency=1.0MHz-9946-pF
Output CapacitanceCoss--3618-pF
Reverse Transfer CapacitanceCrss--238-pF
Turn-on Delay Timetd(ON)VDD=50V,RG=2.5Ω, IDS=50A,VGS=10V-29.1-ns
Turn-on Rise TimeTr--112.3-ns
Turn-off Delay Timetd(OFF)--93.3-ns
Turn-off Fall TimeTf--111.3-ns
Gate Charge Characteristics
Total Gate ChargeQgVDS=80V, VGS=10V, ID=50A-168-nC
Gate-Source ChargeQgs--54--
Gate-Drain ChargeQgd--45--

2411200013_HUAYI-HYG028N10NS1W_C2986716.pdf

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