30V dual N channel MOSFET HUASHUO HSBA3202 with excellent switching performance and RoHS certified design
Key Attributes
Model Number:
HSBA3202
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
15mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
2.3V
Reverse Transfer Capacitance (Crss@Vds):
57pF@15V
Number:
2 N-Channel
Pd - Power Dissipation:
42W
Input Capacitance(Ciss):
491pF@15V
Gate Charge(Qg):
4.5nC@4.5V
Mfr. Part #:
HSBA3202
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA3202 is a dual N-channel, 30V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: Dual N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 35 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 22 | A | |||
| IDM | Pulsed Drain Current2 | 70 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 22.1 | mJ | |||
| IAS | Avalanche Current | 20 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 42 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 3 | /W | ||
| Product Summary | ||||||
| Model | HSBA3202 | |||||
| Type | Dual N-Ch 30V Fast Switching MOSFETs | |||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.034 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=10A | --- | 15 | 18 | m |
| VGS=4.5V , ID=10A | --- | 21 | 30 | V | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.3 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | -5.8 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=30V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=30V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=10A | --- | 12 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 2.5 | --- | |
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=7A | --- | 4.6 | --- | nC |
| Qgs | Gate-Source Charge | --- | 1.85 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 1.6 | --- | nC | |
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3, ID=7A | --- | 7 | --- | ns |
| Tr | Rise Time | --- | 13 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 19 | --- | ns | |
| Tf | Fall Time | --- | 3.4 | --- | ns | |
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 491 | --- | pF |
| Coss | Output Capacitance | --- | 80 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 57 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 10 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | --- | 1 | V |
Notes:
- 1. Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2. Tested by pulsed, pulse width 300s, duty cycle 2%.
- 3. EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.1mH, IAS=20A.
- 4. Power dissipation is limited by 150 junction temperature.
- 5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
2410121448_HUASHUO-HSBA3202_C7543702.pdf
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