HYG090P03LA1C1 Single P Channel MOSFET Featuring Low RDS ON and RoHS Compliant Green Device Material
Key Attributes
Model Number:
HYG090P03LA1C1
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+175℃
RDS(on):
14mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
267pF
Number:
1 P-Channel
Pd - Power Dissipation:
25W
Input Capacitance(Ciss):
2.992nF
Gate Charge(Qg):
60nC
Mfr. Part #:
HYG090P03LA1C1
Package:
DFN-8(3x3)
Product Description
Product Overview
The HYG090P03LA1C1 is a single P-Channel Enhancement Mode MOSFET designed for switching applications. It offers a low RDS(ON) of 7.9 m (typ.) at VGS = -10V and 10.5 m (typ.) at VGS = -4.5V. This device is 100% avalanche tested, reliable, and rugged. It is also Halogen Free and Green (RoHS Compliant), making it suitable for lithium battery protection boards.
Product Attributes
- Brand: Hymexa
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Material: Halogen Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Model | Feature | RDS(ON) (typ.) | VDS | ID (Tc=25C) | Package |
| HYG090P03LA1C1 | Single P-Channel Enhancement Mode MOSFET, -30V/-40A, 100% Avalanche Tested, Reliable and Rugged, Halogen Free and Green Devices Available | 7.9 m @VGS = -10V 10.5 m @VGS = -4.5V | -30 V | -40 A | DFN3*3-8L |
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
| BVDSS | VGS=0V,IDS=-250A | -30 | - | - | V |
| IDSS | VDS=-30V,VGS=0V | - | - | -1 | A |
| IDSS | Tj=125C | - | - | -50 | A |
| VGS(th) | VDS=VGS, IDS=-250A | -1 | -1.5 | -3 | V |
| IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| RDS(ON) | VGS=-10V,IDS=-12A | - | 7.9 | 9.5 | m |
| RDS(ON) | VGS=-4.5V,IDS=-7A | - | 10.5 | 14 | m |
| VSD | ISD=-12A,VGS=0V | - | -0.79 | -1.3 | V |
| trr | ISD=-10A,dISD/dt=100A/s | - | 15 | - | ns |
| Qrr | - | - | 5.5 | - | nC |
| RG | VGS=0V,VDS=0V,F=1MHz | - | 5 | - | |
| Ciss | VGS=0V, VDS=-25V, Frequency=1.0MHz | - | 2992 | - | pF |
| Coss | - | - | 329 | - | pF |
| Crss | - | - | 267 | - | pF |
| td(ON) | VDD=-15V,RG=4, IDS=-10A,VGS=-10V | - | 9.5 | - | ns |
| Tr | - | - | 32 | - | ns |
| td(OFF) | - | - | 87 | - | ns |
| Tf | - | - | 61 | - | ns |
| Qg (VGS=-10V) | VDS =-24V, VGS=-10V, ID=-12A | - | 60.0 | - | nC |
| Qg (VGS=-4.5V) | - | - | 30.0 | - | nC |
| Qgs | - | - | 10.5 | - | nC |
| Qgd | - | - | 14.0 | - | nC |
| Symbol | Parameter | Rating | Unit |
| VDSS | Drain-Source Voltage | -30 | V |
| VGSS | Gate-Source Voltage | 20 | V |
| TJ | Junction Temperature Range | -55 to 175 | C |
| TSTG | Storage Temperature Range | -55 to 175 | C |
| ID | Continuous Drain Current (Tc=25C) | -40 | A |
| ID | Continuous Drain Current (Tc=100C) | -28 | A |
| PD | Maximum Power Dissipation (Tc=25C) | 25 | W |
| PD | Maximum Power Dissipation (Tc=100C) | 12.5 | W |
| RTJC | Thermal Resistance, Junction-to-Case | 6.0 | C/W |
| RTJA | Thermal Resistance, Junction-to-Ambient | 75 | C/W |
| EAS | Single Pulsed-Avalanche Energy (L=0.1mH) | 148 | mJ |
2410121317_HUAYI-HYG090P03LA1C1_C2904445.pdf
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