Power MOSFET HUASHUO HSBB6254 dual N channel 60V 22A continuous drain current with trench technology
Key Attributes
Model Number:
HSBB6254
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
22A
RDS(on):
15mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
39pF@30V
Number:
2 N-Channel
Input Capacitance(Ciss):
1.016nF
Pd - Power Dissipation:
25W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
HSBB6254
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB6254 is a dual N-channel MOSFET designed for fast switching applications. Featuring 60V drain-source voltage and a continuous drain current of up to 22A, these MOSFETs are built with advanced high cell density Trench technology. They offer super low gate charge, excellent CdV/dt effect decline, and are 100% EAS guaranteed. Available in a Green Device option, the HSBB6254 is ideal for load switching, battery protection, lighting, and bridge topologies.
Product Attributes
- Brand: HS-Semi
- Model Series: HSBB6254
- Technology: Advanced high cell density Trench technology
- Certifications: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 22 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 15 | A | |||
| IDM | Pulsed Drain Current2 | 32 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 31 | mJ | |||
| IAS | Avalanche Current | 11 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 25 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 70 | /W | ||
| RJL | Thermal Resistance Junction-Case1 | --- | 9 | /W | ||
| Product Summary | ||||||
| VDS | 60 | V | ||||
| RDS(ON),max | 15 | m | ||||
| ID | 22 | A | ||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.023 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=4A | --- | 12 | 15 | m |
| VGS=4.5V , ID=3A | --- | 16 | 21 | V | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.2 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | -5.08 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=48V , VGS=0V , TJ=55 | --- | --- | 30 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.3 | --- | |
| Qg | Total Gate Charge (10V) | VDS=30V , VGS=10V , ID=4A | --- | 13 | --- | nC |
| Qgs | Gate-Source Charge | --- | 3.88 | --- | ||
| Qgd | Gate-Drain Charge | --- | 2.2 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3 ID=1A | --- | 7 | --- | ns |
| Tr | Rise Time | --- | 18.2 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 19 | --- | ||
| Tf | Fall Time | --- | 3.4 | --- | ||
| Ciss | Input Capacitance | VDS=30V , VGS=0V , f=1MHz | --- | 1016 | --- | pF |
| Coss | Output Capacitance | --- | 231 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 39 | --- | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | 5 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.3 | V |
Applications:
- Load Switching
- Battery Protection
- Lighting
- Bridge Topologies
Notes:
- 1 Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2 Tested by pulsed, pulse width 300us, duty cycle 2%.
- 3 EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.5mH, IAS=11A.
- 4 Power dissipation is limited by 150 junction temperature.
- 5 Theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121502_HUASHUO-HSBB6254_C2903564.pdf
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