P Channel MOSFET HSK2P25 Fast Switching Device with Low Gate Charge and Performance in Load Switches
Key Attributes
Model Number:
HSK2P25
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF@100V
Number:
1 P-Channel
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
500pF@100V
Gate Charge(Qg):
8.9nC@4.5V
Mfr. Part #:
HSK2P25
Package:
SOT-89
Product Description
HSK2P25 P-Ch 250V Fast Switching MOSFETs
The HSK2P25 is a high cell density trenched P-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It features super low gate charge, excellent Cdv/dt effect decline, and is built with advanced high cell density Trench technology. This device meets RoHS and Green Product requirements with full function reliability approval. Available in Green Device.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Switching Speed: Fast Switching
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -250 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1 | -2.0 | A | |||
| ID@TC=70 | Continuous Drain Current, VGS @ -10V1 | -1.0 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -0.4 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V1 | -0.3 | A | |||
| IDM | Pulsed Drain Current2 | -1.2 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.0 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | 130 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 50 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -250 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-0.3A | 3.3 | 4 | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -2.0 | -3.0 | -4.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=-200V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=-200V , VGS=0V , TJ=55 | 10 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-0.8A | 1.5 | S | ||
| Qg | Total Gate Charge | VDS=-100V , VGS=-4.5V , ID=-0.3A | 8.9 | nC | ||
| Qgs | Gate-Source Charge | 1.5 | nC | |||
| Qgd | Gate-Drain Charge | 1.8 | nC | |||
| td(on) | Turn-On Delay Time | VDD=-100V , VGS=-10V , RG=6 , ID=-0.3A | 1.9 | ns | ||
| tr | Rise Time | 1.6 | ns | |||
| td(off) | Turn-Off Delay Time | 22 | ns | |||
| tf | Fall Time | 10.5 | ns | |||
| Ciss | Input Capacitance | VDS=-100V , VGS=0V , f=1MHz | 500 | pF | ||
| Coss | Output Capacitance | 39 | pF | |||
| Crss | Reverse Transfer Capacitance | 20 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -0.3 | A | ||
| ISM | Pulsed Source Current2,4 | -1.2 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1.3 | V | ||
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSK2P25 | SOT-89 | 1000/Tape&Reel |
Notes:
- 1 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2 The data tested by pulsed, pulse width ≤300us, duty cycle ≤2%.
- 3 The power dissipation is limited by 150 junction temperature.
- 4 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410122026_HUASHUO-HSK2P25_C22359224.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
