Low gate charge P channel MOSFET HUASHUO HSS2P20 200V trench technology designed for switching circuits
Key Attributes
Model Number:
HSS2P20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF@100V
Number:
1 P-Channel
Pd - Power Dissipation:
850mW
Input Capacitance(Ciss):
500pF@100V
Gate Charge(Qg):
8.5nC@4.5V
Mfr. Part #:
HSS2P20
Package:
SOT-23L
Product Description
Product Overview
The HSS2P20 is a P-channel, 200V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and is available in a Green Device option. Key advantages include super low gate charge and excellent Cdv/dt effect decline.
Product Attributes
- Brand: HSS
- Product Type: P-Ch MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -200 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1 | -2 | A | |||
| ID@TC=70 | Continuous Drain Current, VGS @ -10V1 | -1.1 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -0.6 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V1 | -0.48 | A | |||
| IDM | Pulsed Drain Current2 | -2.9 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 0.85 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | --- | 150 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 90 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -200 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-1A | 1.9 | 2.4 | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -2.0 | -3.0 | -4.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=-160V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IDSS | Drain-Source Leakage Current | VDS=-160V , VGS=0V , TJ=55 | --- | 10 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=-5V , ID=-0.8A | 0.5 | --- | S | |
| Qg | Total Gate Charge | VDS=-100V , VGS=-4.5V , ID=-0.5A | 8.5 | --- | nC | |
| Qgs | Gate-Source Charge | 1.5 | --- | |||
| Qgd | Gate-Drain Charge | 1.8 | --- | |||
| td(on) | Turn-On Delay Time | VDD=-100V , VGS=-10V , RG=6 ID=-0.5A | 1.9 | --- | ns | |
| tr | Rise Time | 1.2 | --- | |||
| td(off) | Turn-Off Delay Time | 22 | --- | |||
| tf | Fall Time | 11 | --- | |||
| Ciss | Input Capacitance | VDS=-100V , VGS=0V , f=1MHz | 500 | --- | pF | |
| Coss | Output Capacitance | 39 | --- | |||
| Crss | Reverse Transfer Capacitance | 20 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | -1 | A | |
| ISM | Pulsed Source Current2,4 | --- | -2.9 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | -1.3 | V | |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSS2P20 | SOT-23L | 3000/Tape&Reel |
2410122026_HUASHUO-HSS2P20_C22359220.pdf
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