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quality Power switching MOSFET HUAYI HY4008NA2P N Channel 80V 200A for motor and inverter applications factory
quality Power switching MOSFET HUAYI HY4008NA2P N Channel 80V 200A for motor and inverter applications factory

Power switching MOSFET HUAYI HY4008NA2P N Channel 80V 200A for motor and inverter applications

Key Attributes
Model Number: HY4008NA2P
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
580pF
Number:
1 N-channel
Pd - Power Dissipation:
300W
Input Capacitance(Ciss):
7.98nF@0V
Gate Charge(Qg):
161nC
Mfr. Part #:
HY4008NA2P
Package:
TO-220FB-3
Product Description

Product Overview

The HY4008NA2P/B is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for switching applications, power management in inverter systems, and motor control. It features a high current capability of 80V/200A, a low on-resistance of 3.5 m (typ.) at VGS = 10V, and is 100% avalanche tested for reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards.

Product Attributes

  • Brand: Hymexa
  • Certifications: RoHS Compliant, Lead-Free, Green Devices Available

Technical Specifications

ParameterSymbolTest ConditionsMinTyp.MaxUnit
Absolute Maximum Ratings
Drain-Source VoltageVDSSTc=25C Unless Otherwise Noted--80V
Gate-Source VoltageVGSS--±20±20V
Junction Temperature RangeTJ--55-175°C
Storage Temperature RangeTSTG--55-175°C
Source Current-Continuous (Body Diode)ISTc=25°C, Mounted on Large Heat Sink--200A
Pulsed Drain CurrentIDMTc=25°C--550A
Continuous Drain CurrentIDTc=25°C--200A
Continuous Drain CurrentIDTc=100°C--141.4A
Maximum Power DissipationPDTc=25°C--300W
Maximum Power DissipationPDTc=100°C--150W
Thermal Resistance, Junction-to-CaseRθJC--0.5-°C/W
Thermal Resistance, Junction-to-AmbientRθJASurface mounted on 1in² FR-4 board.-62.5-°C/W
Single Pulsed Avalanche EnergyEASL=0.3mH, Limited by TJmax, starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V.-762-mJ
Electrical Characteristics
Drain-Source Breakdown VoltageBVDSSVGS=0V,IDS= 250μA80--V
Drain-to-Source Leakage CurrentIDSSVDS= 80V,VGS=0V--1μA
Drain-to-Source Leakage CurrentIDSSTJ=125°C--50μA
Gate Threshold VoltageVGS(th)VDS=VGS, IDS= 250μA234V
Gate-Source Leakage CurrentIGSSVGS=±20V,VDS=0V--±100nA
Drain-Source On-State ResistanceRDS(ON)VGS= 10V,IDS=80A-3.54mΩ
Diode Forward VoltageVSDISD=80A,VGS=0V-0.891.2V
Reverse Recovery TimetrrISD=80A,dISD/dt=100A/μs-41-ns
Reverse Recovery ChargeQrr--67-nC
Dynamic Characteristics
Gate ResistanceRGVGS=0V,VDS=0V,F=1MHz-0.85-Ω
Input CapacitanceCissVGS=0V, VDS= 25V, Frequency=1.0MHz-7980-pF
Output CapacitanceCoss--925-pF
Reverse Transfer CapacitanceCrss--580-pF
Turn-on Delay Timetd(ON)VDD= 40V,RG=4.0Ω, IDS= 80A,VGS= 10V-32-ns
Turn-on Rise TimeTr--110-ns
Turn-off Delay Timetd(OFF)--80-ns
Turn-off Fall TimeTf--117-ns
Gate Charge Characteristics
Total Gate ChargeQgVDS = 64V, VGS= 10V, IDs= 80A-161-nC
Gate-Source ChargeQgs--41.5-nC
Gate-Drain ChargeQgd--61.5-nC

2410121248_HUAYI-HY4008NA2P_C2887727.pdf

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