Switching P Channel MOSFET HUASHUO HSU4115 with Low Gate Charge and High Cell Density Trench Design
Key Attributes
Model Number:
HSU4115
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
52A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V,18A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
222pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.5nF@15V
Pd - Power Dissipation:
52.1W
Gate Charge(Qg):
27.9nC@4.5V
Mfr. Part #:
HSU4115
Package:
TO-252-2
Product Description
HSU4115 P-Ch 40V Fast Switching MOSFETs
Product Overview
The HSU4115 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval, featuring super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Certifications: RoHS, Green Device Available
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -40 | V | |||
| VGS | Gate-Source Voltage | ±20 | ±20 | V | ||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1 | -52 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1 | -32 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -10 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V1 | -8 | A | |||
| IDM | Pulsed Drain Current2 | -105 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 146 | mJ | |||
| IAS | Avalanche Current | -54 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 52.1 | W | |||
| PD@TA=25 | Total Power Dissipation4 | 2 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 2.4 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -40 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | --- | -0.023 | --- | V/ |
| RDS(ON),max | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-18A | --- | 10.5 | 13 | m |
| VGS=-4.5V , ID=-12A | --- | 15 | 20 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.6 | -2.5 | V |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | --- | 4.74 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=-32V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=-32V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=-5V , ID=-18A | --- | 24 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 7 | 14 | |
| Qg | Total Gate Charge (-4.5V) | VDS=-20V , VGS=-4.5V , ID=-12A | --- | 27.9 | --- | nC |
| Qgs | Gate-Source Charge | --- | 7.7 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 7.5 | --- | nC | |
| td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3, ID=-1A | --- | 40 | --- | ns |
| tr | Rise Time | --- | 35.2 | --- | ns | |
| td(off) | Turn-Off Delay Time | --- | 100 | --- | ns | |
| tf | Fall Time | --- | 9.6 | --- | ns | |
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 3500 | --- | pF |
| Coss | Output Capacitance | --- | 323 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 222 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | -52 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | -105 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1 | V |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSU4115 | TO252-2 | 2500/Tape&Reel |
2410121456_HUASHUO-HSU4115_C701015.pdf
Related Products
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
