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quality N Channel MOSFET HUAYI HYG050N10NS1P 100V 135A RoHS Compliant Power Device for Motor Control factory
quality N Channel MOSFET HUAYI HYG050N10NS1P 100V 135A RoHS Compliant Power Device for Motor Control factory

N Channel MOSFET HUAYI HYG050N10NS1P 100V 135A RoHS Compliant Power Device for Motor Control

Key Attributes
Model Number: HYG050N10NS1P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
135A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 N-channel
Output Capacitance(Coss):
716pF
Input Capacitance(Ciss):
6.359nF
Pd - Power Dissipation:
189.8W
Gate Charge(Qg):
100nC@10V
Mfr. Part #:
HYG050N10NS1P
Package:
TO-220FB-3L
Product Description

Product Overview

The HYG050N10NS1P is an N-Channel Enhancement Mode MOSFET designed for power switching applications and motor control. It features a high continuous drain current of 100V/135A, a low on-state resistance of 4.4m (typ.) at VGS = 10V, and is 100% avalanche tested for reliability. Lead-free and green devices are available, compliant with RoHS standards.

Product Attributes

  • Brand: HYG (Huayi Microelectronics)
  • Origin: China
  • Material: Lead-Free and Green Devices Available (RoHS Compliant)
  • Certifications: RoHS Compliant, Halogen Free

Technical Specifications

ParameterSymbolTest ConditionsMinTyp.MaxUnit
Absolute Maximum Ratings
Drain-Source VoltageVDSSTc=25C Unless Otherwise Noted--100V
Gate-Source VoltageVGSS--±20±20V
Maximum Junction TemperatureTJ--55-175°C
Storage Temperature RangeTSTG--55-175°C
Source Current-Continuous (Body Diode)ISTc=25°C, Mounted on Large Heat Sink--135A
Pulsed Drain CurrentIDMTc=25°C--510A
Continuous Drain CurrentIDTc=25°C--135A
Continuous Drain CurrentIDTc=100°C--95.5A
Maximum Power DissipationPDTc=25°C--189.8W
Maximum Power DissipationPDTc=100°C--94.9W
Thermal Resistance, Junction-to-CaseRθJC---0.79°C/W
Thermal Resistance, Junction-to-AmbientRθJASurface mounted on FR-4 board--62°C/W
Single Pulsed-Avalanche EnergyEASL=0.3mH-452-mJ
Electrical Characteristics (Tc =25°C Unless Otherwise Noted)
Drain-Source Breakdown VoltageBVDSSVGS=0V,IDS=250μA100--V
Drain-to-Source Leakage CurrentIDSSVDS=100V,VGS=0V--1.0μA
Drain-to-Source Leakage CurrentIDSSTJ=125°C--50μA
Gate Threshold VoltageVGS(th)VDS=VGS, IDS=250μA234V
Gate-Source Leakage CurrentIGSSVGS=±20V,VDS=0V--±100nA
Drain-Source On-State ResistanceRDS(ON)VGS=10V,IDS=50A-4.45.2mΩ
Diode Forward VoltageVSDISD=50A,VGS=0V-0.891.3V
Reverse Recovery TimetrrISD=50A,dISD/dt=100A/μs-54.2-ns
Reverse Recovery ChargeQrr--73.7-nC
Dynamic Characteristics
Gate ResistanceRGVGS=0V,VDS=0V,F=1MHz-2.0-Ω
Input CapacitanceCissVGS=0V, VDS=50V, Frequency=1.0MHz-6359-pF
Output CapacitanceCoss--716-pF
Reverse Transfer CapacitanceCrss--77-pF
Turn-on Delay Timetd(ON)VDD=50V,RG=4Ω, IDS=50A,VGS=10V-21-ns
Turn-on Rise TimeTr--82-ns
Turn-off Delay Timetd(OFF)--71-ns
Turn-off Fall TimeTf--104-ns
Gate Charge Characteristics
Total Gate ChargeQgVDS=50V, VGS=10V ID=50A-100-nC
Gate-Source ChargeQgs--30-nC
Gate-Drain ChargeQgd--22-nC

2411200118_HUAYI-HYG050N10NS1P_C2857458.pdf

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