Low RDSON Dual N Channel Fast Switching MOSFET HUASHUO HSCC2734 Designed for Lithium Ion Battery Pack
Key Attributes
Model Number:
HSCC2734
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@4.5V,2A
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
81pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
735pF@10V
Pd - Power Dissipation:
1.56W
Gate Charge(Qg):
10.6nC@4.5V
Mfr. Part #:
HSCC2734
Package:
DFN-6-EP(3x2)
Product Description
Product Overview
The HSCC2734 is a dual N-channel fast switching MOSFET designed with low RDSON trenched technology and robust ESD protection. This product is suitable for Lithium-ion battery pack applications and meets RoHS and Green Product requirements with full function reliability approval. It offers low drain-source ON resistance and is available as a green device.
Product Attributes
- Brand: HS-Semi
- Model: HSCC2734
- Certifications: RoHS, Green Product
- Device Type: Dual N-Channel Fast Switching MOSFET
- Package: DFN2x3
- ESD Protected: Yes
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| General Description | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 4.5V | 8 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 4.5V | 6.4 | A | |||
| IDM | Pulsed Drain Current | 50 | A | |||
| PD@TA=25 | Total Power Dissipation | 1.56 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient | (t 10s) | 80 | /W | ||
| N-Channel Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | V | ||
| RDS(ON),max | Static Drain-Source On-Resistance | VGS=4.5V , ID=2A | 10 | 16 | m | |
| VGS=4.0V , ID=2A | 10.5 | 13.5 | ||||
| VGS=3.7V , ID=2A | 11 | 14 | ||||
| VGS=3.1V , ID=2A | 12.5 | 16 | ||||
| VGS=2.5V , ID=2A | 16.5 | 27.5 | ||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | 1.2 | V | |
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=16V , VGS=0V , TJ=55 | 5 | |||||
| IGSS | Gate-Source Leakage Current | VGS=8V , VDS=0V | 10 | uA | ||
| gfs | Forward Transconductance | VDS=10V , ID=4A | 15 | S | ||
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=3A | 10.6 | nC | ||
| Qgs | Gate-Source Charge | 2.2 | ||||
| Qgd | Gate-Drain Charge | 4.1 | ||||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=4.5V , RG=6 ID=3A | 7 | ns | ||
| Tr | Rise Time | 36 | ||||
| Td(off) | Turn-Off Delay Time | 46.5 | ||||
| Tf | Fall Time | 15 | ||||
| Ciss | Input Capacitance | VDS=10V , VGS=0V , f=1MHz | 735 | pF | ||
| Coss | Output Capacitance | 83 | ||||
| Crss | Reverse Transfer Capacitance | 81 | ||||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 8 | A | ||
| ISM | Pulsed Source Current | 50 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=8.0A , TJ=25 | 1.2 | V | ||
2410121532_HUASHUO-HSCC2734_C700970.pdf
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