Power MOSFET HUAYI HY1001P with 70 Volt Drain Source Voltage and 80 Ampere Continuous Current Rating
Key Attributes
Model Number:
HY1001P
Product Custom Attributes
Drain To Source Voltage:
70V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
214pF
Number:
-
Output Capacitance(Coss):
284pF
Input Capacitance(Ciss):
4.17nF
Pd - Power Dissipation:
115W
Gate Charge(Qg):
79nC
Mfr. Part #:
HY1001P
Package:
TO-220FB-3
Product Description
Product Overview
The HY1001P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers high performance with a 70V/80A rating, low RDS(ON) of 7.2m(typ.)@VGS = 10V, and is 100% avalanche tested for reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HYMEXTA
- Origin: China
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | - | - | 70 | V |
| Gate-Source Voltage | VGSS | - | - | ±20 | ±20 | V |
| Junction Temperature Range | TJ | - | -55 | - | 175 | °C |
| Storage Temperature Range | TSTG | - | -55 | - | 175 | °C |
| Continuous Drain Current | ID | Tc=25°C | - | - | 80 | A |
| Continuous Drain Current | ID | Tc=100°C | - | - | 56.5 | A |
| Pulsed Drain Current | IDM | * Tc=25°C | - | - | 260 | A |
| Maximum Power Dissipation | PD | Tc=25°C | - | - | 115 | W |
| Maximum Power Dissipation | PD | Tc=100°C | - | - | 57.7 | W |
| Thermal Resistance, Junction-to-Case | RθJC | - | - | 1.3 | - | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | ** | - | 62.5 | - | °C/W |
| Single Pulsed-Avalanche Energy | EAS | *** L=0.3mH | - | 205 | - | mJ |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS= 250μA | 70 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS= 70V,VGS=0V | - | - | 1 | μA |
| Drain-to-Source Leakage Current | IDSS | TJ=125°C | - | - | 50 | μA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS= 250μA | 2 | 3 | 4 | V |
| Gate-Source Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS= 10V,IDS= 40A | - | 7.2 | 8.5 | mΩ |
| Diode Forward Voltage | VSD | ISD=40A,VGS=0V | - | 0.87 | 1.1 | V |
| Reverse Recovery Time | trr | ISD=20A,dISD/dt=100A/μs | - | 22 | - | ns |
| Reverse Recovery Charge | Qrr | - | - | 25 | - | nC |
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | - | 2.7 | - | Ω |
| Input Capacitance | Ciss | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 4170 | - | pF |
| Output Capacitance | Coss | - | - | 284 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 214 | - | pF |
| Turn-on Delay Time | td(ON) | VDD= 30V,RG=25Ω, IDS= 20A,VGS= 10V | - | 17 | - | ns |
| Turn-on Rise Time | Tr | - | - | 48 | - | ns |
| Turn-off Delay Time | td(OFF) | - | - | 60 | - | ns |
| Turn-off Fall Time | Tf | - | - | 42 | - | ns |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS = 56V, VGS= 10V, IDs= 20A | - | 79 | - | nC |
| Gate-Source Charge | Qgs | - | - | 16 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 24 | - | nC |
2411220241_HUAYI-HY1001P_C2843506.pdf
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