Trenched N channel MOSFET HUASHUO HSBB3002 offering low R DS ON and gate charge for power conversion
Key Attributes
Model Number:
HSBB3002
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
28A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
65pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
572pF@15V
Pd - Power Dissipation:
20W
Gate Charge(Qg):
7.2nC@4.5V
Mfr. Part #:
HSBB3002
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB3002 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval, providing super low gate charge and excellent CdV/dt effect decline through advanced high cell density Trench technology.Product Attributes
- Brand: HS-Semi
- Model: HSBB3002
- Technology: High cell density trenched N-channel MOSFET
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full function reliability approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 28 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 18 | A | |||
| IDM | Pulsed Drain Current2 | 55 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 22.1 | mJ | |||
| IAS | Avalanche Current | 21 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 20 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | 75 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 6 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.022 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=10A | 18 | m | ||
| VGS=4.5V , ID=5A | 30 | |||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 2.5 | V | |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | -5.1 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=24V , VGS=0V , TJ=55 | 5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=1A | 4.5 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 2.5 | |||
| Qg | Total Gate Charge (4.5V) | VDS=20V , VGS=4.5V , ID=10A | 7.2 | nC | ||
| Qgs | Gate-Source Charge | 1.4 | ||||
| Qgd | Gate-Drain Charge | 2.2 | ||||
| td(on) | Turn-On Delay Time | VDD=12V , VGS=10V , RG=3.3 ID=5A | 4.1 | ns | ||
| tr | Rise Time | 9.8 | ns | |||
| td(off) | Turn-Off Delay Time | 15.5 | ns | |||
| tf | Fall Time | 6.0 | ns | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 572 | pF | ||
| Coss | Output Capacitance | 81 | pF | |||
| Crss | Reverse Transfer Capacitance | 65 | pF | |||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | 28 | A | ||
| ISM | Pulsed Source Current2,5 | 55 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
2409291134_HUASHUO-HSBB3002_C508820.pdf
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