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quality Fast switching P channel MOSFET HUASHUO HSU4P25 featuring trench technology and green certification factory
quality Fast switching P channel MOSFET HUASHUO HSU4P25 featuring trench technology and green certification factory

Fast switching P channel MOSFET HUASHUO HSU4P25 featuring trench technology and green certification

Key Attributes
Model Number: HSU4P25
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF@100V
Number:
1 P-Channel
Input Capacitance(Ciss):
500pF@100V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
8.9nC@4.5V
Mfr. Part #:
HSU4P25
Package:
TO-252
Product Description

Product Overview

The HSU4P25 is a P-channel, 250V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for small power switching and load switch applications. This device meets RoHS and Green Product requirements and has approved full function reliability. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and availability as a green device.

Product Attributes

  • Brand: HSU
  • Product Type: P-Channel MOSFET
  • Technology: Trench
  • Certifications: RoHS, Green Product

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
VDS Drain-Source Voltage -250 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ -10V -4.0 A
ID@TC=70 Continuous Drain Current, VGS @ -10V -3.0 A
ID@TA=25 Continuous Drain Current, VGS @ -10V -1.0 A
ID@TA=70 Continuous Drain Current, VGS @ -10V -0.7 A
IDM Pulsed Drain Current -6 A
PD@TA=25 Total Power Dissipation 2 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-ambient 65 /W
RJC Thermal Resistance Junction-Case 8 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -250 V
RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-0.3A 3.3 4
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -2.0 -3.0 -4.0 V
IDSS Drain-Source Leakage Current VDS=-200V , VGS=0V , TJ=25 1 uA
IDSS Drain-Source Leakage Current VDS=-200V , VGS=0V , TJ=55 10 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V 100 nA
gfs Forward Transconductance VDS=-5V , ID=-0.8A 1.5 S
Qg Total Gate Charge VDS=-100V , VGS=-4.5V , ID=-0.3A 8.9 nC
Qgs Gate-Source Charge 1.5
Qgd Gate-Drain Charge 1.8
Td(on) Turn-On Delay Time VDD=-100V , VGS=-10V , RG=6 ID=-0.3A 1.9 ns
Tr Rise Time 1.6 ns
Td(off) Turn-Off Delay Time 22 ns
Tf Fall Time 10.5 ns
Ciss Input Capacitance VDS=-100V , VGS=0V , f=1MHz 500 pF
Coss Output Capacitance 39 pF
Crss Reverse Transfer Capacitance 20 pF
IS Continuous Source Current VG=VD=0V , Force Current -1.0 A
VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25 -1.3 V

2410122016_HUASHUO-HSU4P25_C22359259.pdf
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