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quality P channel MOSFET HUASHUO HSS1P25 250V fast switching device with high cell density trench technology factory
quality P channel MOSFET HUASHUO HSS1P25 250V fast switching device with high cell density trench technology factory

P channel MOSFET HUASHUO HSS1P25 250V fast switching device with high cell density trench technology

Key Attributes
Model Number: HSS1P25
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
700mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 P-Channel
Output Capacitance(Coss):
39pF
Input Capacitance(Ciss):
500pF
Pd - Power Dissipation:
780mW
Gate Charge(Qg):
8.9nC@4.5V
Mfr. Part #:
HSS1P25
Package:
SOT-23L
Product Description

Product Overview

The HSS1P25 is a P-channel, 250V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and is available with full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Type: P-Channel MOSFET
  • Voltage Rating: 250V
  • Switching Speed: Fast Switching
  • Technology: High Cell Density Trench
  • Certifications: RoHS, Green Product
  • Package: SOT-23L
  • Packaging: 3000/Tape&Reel

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
VDS Drain-Source Voltage -250 V
VGS Gate-Source Voltage 20 V
ID@TA=25 Continuous Drain Current, VGS @ -10V -0.7 A
ID@TA=70 Continuous Drain Current, VGS @ -10V -0.4 A
IDM Pulsed Drain Current -1.2 A
PD@TA=25 Total Power Dissipation 0.78 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
RJA Thermal Resistance Junction-ambient --- 160 /W
RJC Thermal Resistance Junction-Case --- 90 /W
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -250 --- --- V
RDS(ON),Max Static Drain-Source On-Resistance VGS=-10V , ID=-0.3A --- 3.3 4
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -2.0 -3.0 -4.0 V
IDSS Drain-Source Leakage Current VDS=-200V , VGS=0V , TJ=25 --- --- 1 uA
IDSS Drain-Source Leakage Current VDS=-200V , VGS=0V , TJ=55 --- --- 10 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA
gfs Forward Transconductance VDS=-5V , ID=-0.8A --- 1.5 --- S
Qg Total Gate Charge VDS=-100V , VGS=-4.5V , ID=-0.3A --- 8.9 --- nC
Qgs Gate-Source Charge --- 1.5 ---
Qgd Gate-Drain Charge --- 1.8 ---
Td(on) Turn-On Delay Time VDD=-100V , VGS=-10V , RG=6 ID=-0.3A --- 1.9 --- ns
Tr Rise Time --- 1.6 ---
Td(off) Turn-Off Delay Time --- 22 ---
Tf Fall Time --- 10.5 ---
Ciss Input Capacitance VDS=-100V , VGS=0V , f=1MHz --- 500 --- pF
Coss Output Capacitance --- 39 ---
Crss Reverse Transfer Capacitance --- 20 ---
IS Continuous Source Current VG=VD=0V , Force Current --- --- -0.7 A
ISM Pulsed Source Current --- --- -1.2 A
VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25 --- --- -1.3 V

2410122026_HUASHUO-HSS1P25_C22359221.pdf
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