Power Management N Channel MOSFET HUASHUO HSBB3054 Featuring 30V Drain Source Voltage and Fast Switching Performance
Key Attributes
Model Number:
HSBB3054
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
32A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.2mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
55pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.113nF@15V
Pd - Power Dissipation:
25W
Gate Charge(Qg):
9nC@4.5V
Mfr. Part #:
HSBB3054
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB3054 is an N-Channel 30V Fast Switching MOSFET designed for power management applications. It features advanced high cell density Trench technology, offering advantages such as 100% EAS Guaranteed, super low gate charge, and excellent CdV/dt effect decline. This MOSFET is ideal for power management in desktop computers, DC/DC converters, and isolated DC/DC converters in telecom and industrial sectors.
Product Attributes
- Brand: HS-Semi
- Device Type: N-Channel MOSFET
- Technology: Advanced high cell density Trench technology
- Certifications: Green Device Available
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDS (Drain-Source Voltage) | 30 | V | |||
| VGS (Gate-Source Voltage) | 20 | V | |||
| ID@TC=25 (Continuous Drain Current, VGS @ 10V)1 | 32 | A | |||
| ID@TC=70 (Continuous Drain Current, VGS @ 10V)1 | 26 | A | |||
| IDM (Pulsed Drain Current)2 | 100 | A | |||
| EAS (Single Pulse Avalanche Energy)3 | 61.3 | mJ | |||
| IAS (Avalanche Current) | 35 | A | |||
| PD@TC=25 (Total Power Dissipation)4 | 25 | W | |||
| TSTG (Storage Temperature Range) | -55 | 150 | |||
| TJ (Operating Junction Temperature Range) | -55 | 150 | |||
| Thermal Data | |||||
| RJA (Thermal Resistance Junction-Ambient)1 | --- | 60 | /W | ||
| RJC (Thermal Resistance Junction-Case)1 | --- | 5 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS=0V , ID=250uA | 30 | --- | --- | V |
| BVDSS/TJ (BVDSS Temperature Coefficient) | Reference to 25 , ID=1mA | --- | 0.021 | --- | V/ |
| RDS(ON) (Static Drain-Source On-Resistance)2 | VGS=10V , ID=20A | --- | 4.5 | 5.2 | m |
| RDS(ON) (Static Drain-Source On-Resistance)2 | VGS=4.5V , ID=15A | --- | 7.2 | 9 | m |
| VGS(th) (Gate Threshold Voltage) | VGS=VDS , ID =250uA | 1.0 | 1.7 | 2.2 | V |
| VGS(th) (VGS(th) Temperature Coefficient) | --- | -5.73 | --- | mV/ | |
| IDSS (Drain-Source Leakage Current) | VDS=24V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IDSS (Drain-Source Leakage Current) | VDS=24V , VGS=0V , TJ=55 | --- | --- | 5 | uA |
| IGSS (Gate-Source Leakage Current) | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs (Forward Transconductance) | VDS=5V , ID=20A | --- | 65 | --- | S |
| Rg (Gate Resistance) | VDS=10V , VGS=0V , f=1MHz | 0.8 | 1.7 | 2.6 | |
| Qg (Total Gate Charge) | VDS=15V , VGS=4.5V , ID=20A | --- | 9 | --- | nC |
| Qgs (Gate-Source Charge) | --- | 2.8 | --- | nC | |
| Qgd (Gate-Drain Charge) | --- | 3.6 | --- | nC | |
| Td(on) (Turn-On Delay Time) | VDD=15V , VGS=10V , RG=3 , ID=20A | --- | 7 | --- | ns |
| Tr (Rise Time) | --- | 18 | --- | ns | |
| Td(off) (Turn-Off Delay Time) | --- | 19 | --- | ns | |
| Tf (Fall Time) | --- | 3.4 | --- | ns | |
| Ciss (Input Capacitance) | VDS=15V , VGS=0V , f=1MHz | --- | 1113 | --- | pF |
| Coss (Output Capacitance) | --- | 436 | --- | pF | |
| Crss (Reverse Transfer Capacitance) | --- | 55 | --- | pF | |
| Diode Characteristics | |||||
| IS (Continuous Source Current)1,5 | VG=VD=0V , Force Current | --- | --- | 20 | A |
| VSD (Diode Forward Voltage)2 | VGS=0V , IS=1A , TJ=25 | --- | --- | 1 | V |
Notes:
1 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 The data tested by pulsed, pulse width 300s, duty cycle 2%.
3 The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=35A.
4 The power dissipation is limited by 150 junction temperature.
5 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBB3054 | PRPAK3*3 | 3000/Tape&Reel |
2410121503_HUASHUO-HSBB3054_C701034.pdf
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