Low on resistance MOSFET HUAYI HYG025P03LQ1B for inverter systems motor control and power management
Key Attributes
Model Number:
HYG025P03LQ1B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
190A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.314nF@25V
Number:
-
Output Capacitance(Coss):
1.254nF
Input Capacitance(Ciss):
14.22nF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
280nC@10V
Mfr. Part #:
HYG025P03LQ1B
Package:
TO-263-2
Product Description
Product Overview
The HYG025P03LQ1P/B is a P-Channel Enhancement Mode MOSFET from Hymexa, designed for switching applications and power management in inverter systems and motor control. It features low on-state resistance (RDS(ON) as low as 2.3 m typ. at VGS = -10V), 100% avalanche tested, and is available in lead-free and green (RoHS compliant) versions. The device offers reliable and rugged performance.
Product Attributes
- Brand: Hymexa
- Origin: China
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Static Characteristics | BVDSS | VGS=0V,IDS= -250A | -30 | - | - | V |
| IDSS | VDS= -30V,VGS=0V | - | - | -1 | A | |
| VGS(th) | VDS=VGS, IDS= -250A | -1.0 | -1.7 | -3.0 | V | |
| IGSS | VGS=20V,VDS=0V | - | - | 100 | nA | |
| RDS(ON) | VGS= -10V,IDS=-40A | - | 2.3 | 2.8 | m | |
| Diode Characteristics | VSD | ISD=-40A,VGS=0V | - | 0.86 | 1.2 | V |
| trr | ISD=-40A,dISD/dt=100A/s | - | 37 | - | ns | |
| Dynamic Characteristics | RG | VGS=0V,VDS=0V,F=1MHz | - | 2.5 | - | |
| Ciss | VGS=0V, VDS= -25V, Frequency=1.0MHz | - | 14220 | - | pF | |
| Coss | - | - | 1254 | - | pF | |
| Crss | - | - | 1314 | - | pF | |
| Gate Charge Characteristics | Qg | VGS= -10V, VDS = -24V, IDs= -40A | - | 280 | - | nC |
| Qg | VGS= -4.5V, VDS = -24V, IDs= -40A | - | 140 | - | nC | |
| Qgs | - | - | 55 | - | - | nC |
| Qgd | - | - | 60 | - | - | nC |
Absolute Maximum Ratings
| Symbol | Parameter | Tc=25C Unless Otherwise Noted | Rating | Unit |
| VDSS | Drain-Source Voltage | - | -30 | V |
| VGSS | Gate-Source Voltage | - | 20 | V |
| TJ | Junction Temperature Range | - | -55 to 175 | C |
| TSTG | Storage Temperature Range | - | -55 to 175 | C |
| ID | Continuous Drain Current | Tc=25C | -190 | A |
| ID | Continuous Drain Current | Tc=100C | -134 | A |
| PD | Maximum Power Dissipation | Tc=25C | 200 | W |
| PD | Maximum Power Dissipation | Tc=100C | 100 | W |
| RJC | Thermal Resistance, Junction-to-Case | - | 0.75 | C/W |
| RJA | Thermal Resistance, Junction-to-Ambient | Surface mounted on 1in FR-4 board. | ** 62.5 | C/W |
2411220116_HUAYI-HYG025P03LQ1B_C2763415.pdf
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