High cell density trench technology P channel MOSFET HUASHUO HSBB2627 designed for power conversion
Key Attributes
Model Number:
HSBB2627
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
48A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
431pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
5.783nF@15V
Pd - Power Dissipation:
29W
Gate Charge(Qg):
63nC@4.5V
Mfr. Part #:
HSBB2627
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB2627 is a P-channel MOSFET featuring high cell density and trenched technology, designed to offer excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements, with full functional reliability approval. Its key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density Trench technology, making it suitable for demanding power conversion scenarios.
Product Attributes
- Brand: HS-Semi
- Model: HSBB2627
- Certifications: RoHS, Green Product
- Technology: Advanced high cell density Trench technology
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | ±8 | ±8 | V | ||
| ID@TC=25 | Continuous Drain Current, VGS @ -4.5V1 | -48 | A | |||
| ID@TC=70 | Continuous Drain Current, VGS @ -4.5V1 | -38 | A | |||
| IDM | Pulsed Drain Current2 | -100 | A | |||
| PD@TC=25 | Total Power Dissipation3 | 29 | W | |||
| PD@TC=70 | Total Power Dissipation3 | 19 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | 75 | /W | |||
| RJA | Thermal Resistance Junction-Ambient1 (t ≤10s) | 40 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 4.2 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.012 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-10A | 9 | m | ||
| VGS=-2.5V , ID=-8A | 11.5 | m | ||||
| VGS=-1.8V , ID=-6A | 15 | m | ||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.3 | -1.0 | V | |
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | 2.94 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-20V , VGS=0V , TJ=25 | 1 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±8V , VDS=0V | ±100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-10A | 43 | S | ||
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-10A | 63 | nC | ||
| Qgs | Gate-Source Charge | 9.1 | nC | |||
| Qgd | Gate-Drain Charge | 13 | nC | |||
| td(on) | Turn-On Delay Time | VDD=-10V , VGS=-4.5V , RG=3.3, ID=-10A | 15.8 | ns | ||
| tr | Rise Time | 76.8 | ns | |||
| td(off) | Turn-Off Delay Time | 193 | ns | |||
| tf | Fall Time | 186.4 | ns | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 5783 | pF | ||
| Coss | Output Capacitance | 509 | pF | |||
| Crss | Reverse Transfer Capacitance | 431 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -10.7 | A | ||
| ISM | Pulsed Source Current2,4 | -60 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| trr | Reverse Recovery Time | IF=-10A , dI/dt=100A/µs , TJ =25 | 27 | nS | ||
| Qrr | Reverse Recovery Charge | 17.8 | nC | |||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2409291134_HUASHUO-HSBB2627_C508819.pdf
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