Dual P channel 30V fast switching MOSFET HUASHUO HSM4963 for synchronous buck converter applications
Key Attributes
Model Number:
HSM4963
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
RDS(on):
65mΩ@2.5V,5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
195pF@10V
Number:
2 P-Channel
Input Capacitance(Ciss):
740pF@10V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
8nC@4.5V
Mfr. Part #:
HSM4963
Package:
SOP-8
Product Description
Product Overview
The HSM4963 is a dual P-channel, 30V fast-switching MOSFET designed for high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. The device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It provides super low gate charge and excellent CdV/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Product
- Testing: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSM4963 | Drain-Source Voltage (VDS) | -20 | V | |||
| Gate-Source Voltage (VGS) | ±12 | V | ||||
| Continuous Drain Current (ID@TA=25) | -VGS @ -10V1 | -6 | A | |||
| Continuous Drain Current (ID@TA=70) | -VGS @ -10V1 | -5 | A | |||
| Pulsed Drain Current (IDM)2 | -24 | A | ||||
| Total Power Dissipation (PD@TA=25)4 | 2 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA)1 | --- | 110 | /W | |||
| Thermal Resistance Junction-Case (RJC)1 | --- | 50 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -20 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON),typ)2 | VGS=-4.5V , ID=-6A | --- | 40 | 55 | m | |
| VGS=-2.5V , ID=-5A | --- | 50 | 65 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -0.5 | -0.85 | -1.2 | V | |
| VGS(th) Temperature Coefficient (VGS(th)) | --- | 4.6 | --- | mV/ | ||
| Drain-Source Leakage Current (IDSS) | VDS=-20V , VGS=0V , TJ=25 | --- | --- | -1 | uA | |
| VDS=-20V , VGS=0V , TJ=55 | --- | --- | -5 | uA | ||
| Gate-Source Leakage Current (IGSS) | VGS=±12V , VDS=0V | --- | --- | ±100 | nA | |
| Forward Transconductance (gfs) | VDS=-5V , ID=-4A | --- | 5 | --- | S | |
| Total Gate Charge (Qg) (-4.5V) | VDS=-10V , VGS=-4.5V , ID=-4A | --- | 8 | --- | nC | |
| Gate-Source Charge (Qgs) | --- | 2 | --- | nC | ||
| Gate-Drain Charge (Qgd) | --- | 3 | --- | nC | ||
| Switching Times | Turn-On Delay Time (Td(on)) | VDD=-10V , VGS=-4.5V , RL=9.1, ID=-6A, RGEN=1 | --- | 12 | --- | ns |
| Rise Time (Tr) | --- | 36 | --- | ns | ||
| Turn-Off Delay Time (Td(off)) | --- | 30 | --- | ns | ||
| Fall Time (Tf) | --- | 10 | --- | ns | ||
| Capacitance | Input Capacitance (Ciss) | VDS=-10V , VGS=0V , f=1MHz | --- | 740 | --- | pF |
| Output Capacitance (Coss) | --- | 275 | --- | pF | ||
| Reverse Transfer Capacitance (Crss) | --- | 195 | --- | pF | ||
| Diode Forward Voltage (VSD)2 | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1.2 | V |
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSM4963 | SOP-8 | Tape&Reel | 4000 |
2410121531_HUASHUO-HSM4963_C5341680.pdf
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