Power Switching N Channel Enhancement Mode MOSFET HUAYI HY029N10P with 100V 270A Rating and Low On Resistance
Key Attributes
Model Number:
HY029N10P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
270A
Operating Temperature -:
-
RDS(on):
3.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
37pF
Number:
1 N-channel
Output Capacitance(Coss):
1.624nF
Input Capacitance(Ciss):
10.8nF
Pd - Power Dissipation:
394.7W
Gate Charge(Qg):
148.7nC@10V
Mfr. Part #:
HY029N10P
Package:
TO-220FB-3
Product Description
Product Overview
The HY029N10P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications, including Uninterruptible Power Supplies. It offers high performance with a 100V/270A rating, low on-resistance of 2.6m (typ.) at VGS = 10V, and is 100% avalanche tested for reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HYMExa
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification at lead-free peak reflow temperature. Defined as "Green" (lead-free and halogen-free).
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ. | Max | Unit | |
| HY029N10 | Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | Tc=25C | 100 | V | |||
| VGSS | Gate-Source Voltage | 20 | V | ||||
| TJ | Maximum Junction Temperature | 175 | C | ||||
| TSTG | Storage Temperature Range | -55 | 175 | C | |||
| ID | Continuous Drain Current | Tc=25C | 270 | A | |||
| ID | Continuous Drain Current | Tc=100C | 190 | A | |||
| IDM | Pulsed Drain Current | Tc=25C | 725 | A | |||
| PD | Maximum Power Dissipation | Tc=25C | 394.7 | W | |||
| PD | Maximum Power Dissipation | Tc=100C | 197.3 | W | |||
| RJC | Thermal Resistance, Junction-to-Case | 0.38 | C/W | ||||
| HY029N10 | Electrical Characteristics (Tc =25C Unless Otherwise Noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V,IDS=250A | 100 | V | |||
| IDSS | Drain-to-Source Leakage Current | VDS=100V,VGS=0V | 1.0 | A | |||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=250A | 2 | 3 | 4 | V | |
| IGSS | Gate-Source Leakage Current | VGS=20V,VDS=0V | 100 | nA | |||
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V,IDS=50A | 2.6 | 3.3 | m | ||
| VSD | Diode Forward Voltage | ISD=50A,VGS=0V | 0.8 | 1.3 | V | ||
| trr | Reverse Recovery Time | ISD=50A,dISD/dt=100A/s | 48 | ns | |||
| Qrr | Reverse Recovery Charge | 78 | nC | ||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | 3.6 | ||||
| HY029N10 | Dynamic Characteristics (Tc =25C Unless Otherwise Noted) | ||||||
| Ciss | Input Capacitance | VGS=0V, VDS=50V, Frequency=1.0MHz | 10800 | pF | |||
| Coss | Output Capacitance | 1624 | pF | ||||
| Crss | Reverse Transfer Capacitance | 37 | pF | ||||
| td(ON) | Turn-on Delay Time | VDD=50V,RG=3.6, IDS=50A,VGS=10V | 28 | ns | |||
| HY029N10 | Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS=50V, VGS=10V ID=50A | 148.7 | nC | |||
| Qgs | Gate-Source Charge | 43.9 | nC | ||||
| Qgd | Gate-Drain Charge | 27.1 | nC | ||||
2411220237_HUAYI-HY029N10P_C2763404.pdf
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