Durable HUAYI HY029N10B6 N Channel MOSFET 100V 280A with Halogen Free Green RoHS Compliant Material
Key Attributes
Model Number:
HY029N10B6
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
280A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
37pF@50V
Number:
-
Input Capacitance(Ciss):
10.8nF
Pd - Power Dissipation:
405W
Gate Charge(Qg):
150nC@10V
Mfr. Part #:
HY029N10B6
Package:
TO-263-6
Product Description
Product Overview
The HY029N10B6 is a N-Channel Enhancement Mode MOSFET designed for high-performance switching applications. It features a 100V/280A rating with a low on-resistance of 2.3 m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free and green (RoHS compliant) options available. It is suitable for applications such as brushless motor drive and electric power steering.
Product Attributes
- Brand: HYMExa
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Material: Halogen-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, J-STD-020 MSL Classification
Technical Specifications
| Parameter | Symbol | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | V | 100 | ||
| Gate-Source Voltage | VGSS | V | ±20 | |||
| Maximum Junction Temperature | TJ | °C | 175 | |||
| Storage Temperature Range | TSTG | °C | -55 | 175 | ||
| Source Current-Continuous (Body Diode) | IS | Tc=25°C, Mounted on Large Heat Sink | A | 280 | ||
| Pulsed Drain Current | IDM | Tc=25°C | A | 760 | ||
| Continuous Drain Current | ID | Tc=25°C | A | 280 | ||
| Tc=100°C | A | 198 | ||||
| Maximum Power Dissipation | PD | Tc=25°C | W | 405 | ||
| Tc=100°C | W | 203 | ||||
| Thermal Resistance-Junction to Case | RθJC | °C/W | 0.37 | |||
| Thermal Resistance-Junction to Ambient | RθJA | Surface Mounted on FR4 Board | °C/W | 40 | ||
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, VD=80V, VGS=10V, Starting TJ=25°C | mJ | 926.8 | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250μA | V | 100 | ||
| Drain-to-Source Leakage Current | IDSS | VDS=100V, VGS=0V | μA | 1 | ||
| TJ=125°C | μA | 50 | ||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250μA | V | 2 | 3 | 4 |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | nA | ±100 | ||
| Drain-Source On-State Resistance | RDS(ON)* | VGS=10V, IDS=50A | mΩ | 2.3 | 3.0 | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD* | ISD=50A, VGS=0V | V | 0.8 | 1.3 | |
| Reverse Recovery Time | trr | ISD=50A, dISD/dt=100A/μs | ns | 86.2 | ||
| Reverse Recovery Charge | Qrr | nC | 216 | |||
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V, VDS=0V, F=1 MHz | Ω | 4.1 | ||
| Input Capacitance | Ciss | VGS=0V, VDS=50V, Frequency=1.0MHz | pF | 10800 | ||
| Output Capacitance | Coss | pF | 1624 | |||
| Reverse Transfer Capacitance | Crss | pF | 37 | |||
| Turn-on Delay Time | td(ON) | VDD=50V, RG=4Ω, IDS=50A, VGS=10V | ns | 25.6 | ||
| Turn-on Rise Time | Tr | ns | 119.5 | |||
| Turn-off Delay Time | td(OFF) | ns | 122.5 | |||
| Turn-off Fall Time | Tf | ns | 104.4 | |||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS =50V, VGS=10V, ID=50A | nC | 150 | ||
| Gate-Source Charge | Qgs | nC | 54 | |||
| Gate-Drain Charge | Qgd | nC | 25 | |||
2411220222_HUAYI-HY029N10B6_C2687419.pdf
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