synchronous buck converter MOSFET HUASHUO HSCB3014 with trenched N channel and low conduction losses
Key Attributes
Model Number:
HSCB3014
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
17mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
109pF
Number:
1 N-channel
Output Capacitance(Coss):
131pF
Input Capacitance(Ciss):
940pF
Pd - Power Dissipation:
26W
Gate Charge(Qg):
9.63nC@4.5V
Mfr. Part #:
HSCB3014
Package:
DFN2x2-6L
Product Description
Product Overview
The HSCB3014 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed, ensuring full function reliability.Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- Key Features: 100% EAS Guaranteed, Super Low Gate Charge, Excellent CdV/dt effect decline
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSCB3014 | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 30 | --- | --- | V |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=10A | --- | 9 | 12 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=8A | --- | 12 | 17 | V | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 1.6 | 2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=24V , VGS=0V , TJ=25 | --- | --- | 1 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=24V , VGS=0V , TJ=55 | --- | --- | 5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | --- | 100 | nA | |
| Forward Transconductance (gfs) | VDS=5V , ID=8A | --- | 24 | --- | S | |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | --- | 1.8 | 3 | ||
| Total Gate Charge (Qg) | VDS=15V , VGS=4.5V , ID=8A | --- | 9.63 | --- | nC | |
| Turn-On Delay Time (Td(on)) | VDD=15V , VGS=10V , RG=1.5, ID=8A | --- | 4.2 | --- | ns | |
| Rise Time (Tr) | VDD=15V , VGS=10V , RG=1.5, ID=8A | --- | 8.2 | --- | ns | |
| Turn-Off Delay Time (Td(off)) | VDD=15V , VGS=10V , RG=1.5, ID=8A | --- | 31 | --- | ns | |
| Absolute Maximum Ratings | Drain-Source Voltage (VDS) | --- | --- | --- | 30 | V |
| Gate-Source Voltage (VGS) | --- | --- | --- | 20 | V | |
| Continuous Drain Current (ID@TA=25) | VGS @ 10V1 | --- | --- | 10 | A | |
| Continuous Drain Current (ID@TA=70) | VGS @ 10V1 | --- | --- | 8 | A | |
| Thermal Data | Thermal Resistance Junction-Ambient (RJA) | --- | --- | --- | 75 | /W |
| Thermal Resistance Junction-Case (RJC)1 | --- | --- | --- | 4.8 | /W |
2410122017_HUASHUO-HSCB3014_C28314513.pdf
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