Battery Protection MOSFET HUAYI HY0C20C Dual N Channel Device with Low Rds on and Halogen Free Build
Key Attributes
Model Number:
HY0C20C
Product Custom Attributes
Configuration:
Common Drain
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
14mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
670pF
Pd - Power Dissipation:
1.56W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
HY0C20C
Package:
DFN-6L(2x3)
Product Description
Product Overview
The HY0C20C is a Dual N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low Rds(on) due to its high cell density, making it suitable for battery pack protection and power tools. This device is available as a halogen-free option.
Product Attributes
- Brand: HUAYI
- Origin: China
- Material: Halogen Free (RoHS compliant)
- Color: Green Device
- Certifications: RoHS
Technical Specifications
| Model | ESD Rating | VDSS (V) | VGSS (V) | TJ (C) | TSTG (C) | ID (A) @ TC=25C | ID (A) @ TC=70C | PD (W) @ TC=25C | PD (W) @ TC=70C | RJA (C/W) | BVDSS (V) | IDSS (A) | VGS(th) (V) | IGSS (A) | RDS(ON) (m) @ VGS=4.5V | RDS(ON) (m) @ VGS=2.5V | VSD (V) @ IS=1A | Ciss (pF) | Coss (pF) | Crss (pF) | td(ON) (ns) | Tr (ns) | td(OFF) (ns) | Tf (ns) | Qg (nC) | Qgs (nC) | Qgd (nC) |
| HY0C20C | 2000V HBM | 16 | 10 | 150 | -55 to 150 | 20 | 12 | 1.6 | 1.00 | 80 | 16 | 1.00 | 0.5-1.5 | 10 | 9 @ 8A | 11.5 @ 5.5A | 0.7 | 670 | 140 | 18 | 15 | 21 | 46 | 22 | 4 | 1.1 | 1.56 |
2411220040_HUAYI-HY0C20C_C358135.pdf
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