High Cell Density Trenched N Channel MOSFET HUASHUO HSH3024 for Synchronous Buck Converter Performance
Key Attributes
Model Number:
HSH3024
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.7mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
435pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
7.75nF@25V
Pd - Power Dissipation:
140W
Gate Charge(Qg):
65nC@15V
Mfr. Part #:
HSH3024
Package:
TO-263
Product Description
Product Overview
The HSH3024 is a high cell density trenched N-channel Fast Switching MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval, featuring super low gate charge and excellent CdV/dt effect decline due to its advanced high cell density Trench technology.
Product Attributes
- Brand: HSH-Semi
- Product Type: N-Channel Fast Switching MOSFET
- Certifications: RoHS, Green Product
- Guarantees: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±20 | ±20 | V | ||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1,6 | 200 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1,6 | 126 | A | |||
| IDM | Pulsed Drain Current2 | 800 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 245 | mJ | |||
| IAS | Avalanche Current | 70 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 140 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 0.68 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.014 | --- | V/ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=30A | 1.7 | 2.1 | mΩ | |
| VGS=4.5V , ID=15A | 2 | 2.6 | mΩ | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1 | 1.6 | 2.5 | V |
| ΔVGS(th) | VGS(th) Temperature Coefficient | -4 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=24V , VGS=0V , TJ=55 | --- | 10 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=10V , ID=15A | 30 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.2 | --- | Ω | |
| Qg | Total Gate Charge | VDS=15V , VGS=4.5V , ID=10A | 65 | --- | nC | |
| Qgs | Gate-Source Charge | 16 | --- | |||
| Qgd | Gate-Drain Charge | 21 | --- | |||
| td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3Ω, ID=1A | 28 | --- | ns | |
| tr | Rise Time | 45 | --- | ns | ||
| td(off) | Turn-Off Delay Time | 105 | --- | ns | ||
| tf | Fall Time | 40 | --- | ns | ||
| Ciss | Input Capacitance | VDS=25V , VGS=0V , f=1MHz | 7750 | --- | pF | |
| Coss | Output Capacitance | 945 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 435 | --- | pF | ||
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=40A , TJ=25 | --- | 1 | V | |
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300us, duty cycle ≤ 2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=70A.
4. The power dissipation is limited by 175 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
6. Package limitation current is 120A.
2410121641_HUASHUO-HSH3024_C508816.pdf
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