Power switching device HUASHUO HSP60N06 N channel MOSFET with trench technology and low gate charge
Key Attributes
Model Number:
HSP60N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
12mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
106pF@4.5V
Number:
1 N-channel
Pd - Power Dissipation:
85W
Input Capacitance(Ciss):
2.84nF@15V
Gate Charge(Qg):
23nC@4.5V
Mfr. Part #:
HSP60N06
Package:
TO-220
Product Description
Product Overview
The HSP60N06 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and low gate charge, contributing to efficient power conversion. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Its advanced high cell density Trench technology ensures superior performance and reliability.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDS Drain-Source Voltage | 60 | V | |||
| VGS Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 Continuous Drain Current, VGS @ 10V | 60 | A | |||
| ID@TC=70 Continuous Drain Current, VGS @ 10V | 41 | A | |||
| IDM Pulsed Drain Current | 110 | A | |||
| EAS Single Pulse Avalanche Energy | 70 | mJ | |||
| IAS Avalanche Current | 38 | A | |||
| PD@TC=25 Total Power Dissipation | 85 | W | |||
| TSTG Storage Temperature Range | -55 | 150 | |||
| TJ Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | |||||
| RJA Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC Thermal Resistance Junction-Case | 1.4 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | |||||
| BVDSS Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| ΔBVDSS/ΔTJ BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.052 | --- | V/ |
| RDS(ON) Static Drain-Source On-Resistance | VGS=10V , ID=30A | --- | 12 | 16 | m |
| VGS=4.5V , ID=15A | --- | 14 | 20 | m | |
| VGS(th) Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.5 | V |
| ΔVGS(th) VGS(th) Temperature Coefficient | --- | -5.76 | --- | mV/ | |
| IDSS Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=48V , VGS=0V , TJ=55 | --- | --- | 5 | uA | |
| IGSS Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs Forward Transconductance | VDS=5V , ID=30A | --- | 45 | --- | S |
| Rg Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.7 | --- | |
| Qg Total Gate Charge (4.5V) | VDS=48V , VGS=4.5V , ID=15A | --- | 23 | --- | nC |
| Qgs Gate-Source Charge | --- | 7.5 | --- | nC | |
| Qgd Gate-Drain Charge | --- | 7.9 | --- | nC | |
| Td(on) Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3, ID=15A | --- | 7.4 | --- | ns |
| Tr Rise Time | --- | 50 | --- | ns | |
| Td(off) Turn-Off Delay Time | --- | 36 | --- | ns | |
| Tf Fall Time | --- | 7.8 | --- | ns | |
| Ciss Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 2840 | --- | pF |
| Coss Output Capacitance | --- | 150 | --- | pF | |
| Crss Reverse Transfer Capacitance | --- | 106 | --- | pF | |
| Diode Characteristics | |||||
| IS Continuous Source Current | VG=VD=0V , Force Current | --- | --- | 60 | A |
| ISM Pulsed Source Current | --- | --- | 90 | A | |
| VSD Diode Forward Voltage | VGS=0V , IS=A , TJ=25 | --- | --- | 1.2 | V |
| trr Reverse Recovery Time | IF=15A , dI/dt=100A/µs , TJ=25 | --- | 16 | --- | ns |
| Qrr Reverse Recovery Charge | --- | 11 | --- | nC | |
2410121456_HUASHUO-HSP60N06_C7543709.pdf
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