Fast Switching N Channel MOSFET HUASHUO HSU3004 Featuring Low RDS ON and High Cell Density Technology

Key Attributes
Model Number: HSU3004
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
183pF
Number:
1 N-channel
Output Capacitance(Coss):
228pF
Input Capacitance(Ciss):
1.843nF
Pd - Power Dissipation:
41W
Gate Charge(Qg):
17.6nC@4.5V
Mfr. Part #:
HSU3004
Package:
TO-252-2
Product Description

Product Overview

The HSU3004 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and gate charge characteristics. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Channel Fast Switching MOSFET
  • Certifications: RoHS, Green Device Available
  • Reliability: 100% EAS Guaranteed, Full Function Reliability Approved

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1 55 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1 40 A
ID@TA=25 Continuous Drain Current, VGS @ 10V1 13.6 A
ID@TA=70 Continuous Drain Current, VGS @ 10V1 11.4 A
IDM Pulsed Drain Current2 110 A
EAS Single Pulse Avalanche Energy3 57.8 mJ
IAS Avalanche Current 34 A
PD@TC=25 Total Power Dissipation4 41 W
PD@TA=25 Total Power Dissipation4 2.42 W
TSTG Storage Temperature Range -55 175
TJ Operating Junction Temperature Range -55 175
Thermal Data
RJA Thermal Resistance Junction-ambient (Steady State)1 --- 62 /W
RJC Thermal Resistance Junction-Case1 --- 3.6 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
BVDSS/TJ BVDSS Temperature Coefficient Reference to 25 , ID=1mA 0.027 --- V/
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=55A 8.5 m
VGS=4.5V , ID=15A 11 14 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.5 2.5 V
VGS(th)/TJ VGS(th) Temperature Coefficient -5.8 --- mV/
IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25 --- 1 uA
VDS=24V , VGS=0V , TJ=55 --- 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- 100 nA
gfs Forward Transconductance VDS=5V , ID=30A 38 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 2.2 3.5
Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=15A 12.6 17.6 nC
Qgs Gate-Source Charge 4.2 5.9 nC
Qgd Gate-Drain Charge 5.1 7.1 nC
td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3, ID=15A 4.6 9.2 ns
tr Rise Time 12.2 22 ns
td(off) Turn-Off Delay Time 26.6 53 ns
tf Fall Time 8 16 ns
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz 1317 1843 pF
Coss Output Capacitance 163 228 pF
Crss Reverse Transfer Capacitance 131 183 pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- 55 A
ISM Pulsed Source Current2,5 --- 110 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 --- 1.2 V
trr Reverse Recovery Time IF=30A , dI/dt=100A/s , TJ=25 9.2 --- nS
Qrr Reverse Recovery Charge 2 --- nC
Part Number Package Code Packaging
HSU3004 TO252-2 2500/Tape&Reel

2410121513_HUASHUO-HSU3004_C2903559.pdf
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