Fast Switching N Channel MOSFET HUASHUO HSU3004 Featuring Low RDS ON and High Cell Density Technology
Product Overview
The HSU3004 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and gate charge characteristics. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel Fast Switching MOSFET
- Certifications: RoHS, Green Device Available
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 55 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 40 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 13.6 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 11.4 | A | |||
| IDM | Pulsed Drain Current2 | 110 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 57.8 | mJ | |||
| IAS | Avalanche Current | 34 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 41 | W | |||
| PD@TA=25 | Total Power Dissipation4 | 2.42 | W | |||
| TSTG | Storage Temperature Range | -55 | 175 | |||
| TJ | Operating Junction Temperature Range | -55 | 175 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient (Steady State)1 | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 3.6 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.027 | --- | V/ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=55A | 8.5 | m | ||
| VGS=4.5V , ID=15A | 11 | 14 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.5 | 2.5 | V |
| VGS(th)/TJ | VGS(th) Temperature Coefficient | -5.8 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=24V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=30A | 38 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 2.2 | 3.5 | ||
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=15A | 12.6 | 17.6 | nC | |
| Qgs | Gate-Source Charge | 4.2 | 5.9 | nC | ||
| Qgd | Gate-Drain Charge | 5.1 | 7.1 | nC | ||
| td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3, ID=15A | 4.6 | 9.2 | ns | |
| tr | Rise Time | 12.2 | 22 | ns | ||
| td(off) | Turn-Off Delay Time | 26.6 | 53 | ns | ||
| tf | Fall Time | 8 | 16 | ns | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 1317 | 1843 | pF | |
| Coss | Output Capacitance | 163 | 228 | pF | ||
| Crss | Reverse Transfer Capacitance | 131 | 183 | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 55 | A | |
| ISM | Pulsed Source Current2,5 | --- | 110 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
| trr | Reverse Recovery Time | IF=30A , dI/dt=100A/s , TJ=25 | 9.2 | --- | nS | |
| Qrr | Reverse Recovery Charge | 2 | --- | nC | ||
| Part Number | Package Code | Packaging |
|---|---|---|
| HSU3004 | TO252-2 | 2500/Tape&Reel |
2410121513_HUASHUO-HSU3004_C2903559.pdf
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