High Voltage N Channel MOSFET HUAYI HY1915P with 150V Breakdown and 15 Milliohm On State Resistance
Key Attributes
Model Number:
HY1915P
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
85A
Operating Temperature -:
-55℃~+175℃
RDS(on):
18mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
161pF
Number:
1 N-channel
Output Capacitance(Coss):
384pF
Input Capacitance(Ciss):
5.125nF
Pd - Power Dissipation:
263W
Gate Charge(Qg):
103nC@10V
Mfr. Part #:
HY1915P
Package:
TO-220FB-3L
Product Description
Product Overview
The HY1915P/B V2.0 is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a high breakdown voltage of 150V and a continuous drain current of 85A, with a low on-state resistance of 15m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available. It is suitable for use in Uninterruptible Power Supplies and motor control systems.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
- Material: Molding compounds/die attach materials and 100% matte tin plate Termination finish (for lead-free products)
Technical Specifications
| Parameter | Symbol | Test Conditions | HY1915 | Unit | Min | Typ. | Max |
| Static Characteristics | BVDSS | VGS=0V,IDS=250A | 150 | V | - | - | - |
| IDSS | VDS=150V,VGS=0V | - | - | 1.0 | A | ||
| IDSS (TJ=125C) | VDS=150V,VGS=0V | - | - | 50 | A | ||
| VGS(th) | VDS=VGS, IDS=250A | 3.0 | 3.8 | 5.0 | V | ||
| IGSS | VGS=20V,VDS=0V | - | - | 100 | nA | ||
| RDS(ON)* | VGS=10V,IDS=30A | - | 15 | 18 | m | ||
| Diode Characteristics | VSD* | ISD=30A,VGS=0V | - | 0.85 | 1.3 | V | |
| trr | ISD=30A,dISD/dt=100A/s | - | 48 | - | ns | ||
| trr | Qrr | ISD=30A,dISD/dt=100A/s | - | 78 | - | nC | |
| Dynamic Characteristics | RG | VGS=0V,VDS=0V,F=1 MHz | - | 3.1 | - | ||
| Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 5125 | - | pF | ||
| Coss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 384 | - | pF | ||
| Crss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 161 | - | pF | ||
| Switching Characteristics | td(ON) | VDD=100V,RG=2.5, IDS=30A,VGS=10V | - | 28 | - | ns | |
| Tr | VDD=100V,RG=2.5, IDS=30A,VGS=10V | - | 30 | - | ns | ||
| td(OFF) | VDD=100V,RG=2.5, IDS=30A,VGS=10V | - | 95 | - | ns | ||
| Tf | VDD=100V,RG=2.5, IDS=30A,VGS=10V | - | 40 | - | ns | ||
| Gate Charge Characteristics | Qg | VDS100V, VGS=10V ID=30A | - | 103 | - | nC | |
| Qgs | VDS100V, VGS=10V ID=30A | - | 35 | - | nC | ||
| Qgd | VDS100V, VGS=10V ID=30A | - | 42 | - | nC | ||
| Absolute Maximum Ratings | VDSS | Tc=25C Unless Otherwise Noted | 150 | V | - | - | - |
| VGSS | Tc=25C Unless Otherwise Noted | 20 | V | - | - | - | |
| TJ | Tc=25C Unless Otherwise Noted | 175 | C | - | - | - | |
| TSTG | Tc=25C Unless Otherwise Noted | -55 to 175 | C | - | - | - | |
| ID | Tc=25C | 85 | A | - | - | - | |
| ID | Tc=100C | 60 | A | - | - | - | |
| PD | Tc=25C | 263 | W | - | - | - | |
| PD | Tc=100C | 132 | W | - | - | - | |
| RJC | Tc=25C Unless Otherwise Noted | 0.57 | C/W | - | - | - | |
| RJA | Tc=25C Unless Otherwise Noted | 62 | C/W | - | - | - | |
| EAS | Single Pulsed-Avalanche Energy L=0.3mH | 655 | mJ | - | - | - |
2409302230_HUAYI-HY1915P_C358001.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
