30V N channel MOSFET HUASHUO HSBA3004 with high cell density trench design and super low gate charge
Key Attributes
Model Number:
HSBA3004
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
58A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
183pF
Number:
1 N-channel
Output Capacitance(Coss):
228pF
Input Capacitance(Ciss):
1.844nF@15V
Pd - Power Dissipation:
46W
Gate Charge(Qg):
17.6nC@4.5V
Mfr. Part #:
HSBA3004
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA3004 is a high cell density trenched N-channel 30V Fast Switching MOSFET designed for applications requiring excellent RDS(ON) and low gate charge. This device meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved. It offers super low gate charge and excellent CdV/dt effect decline, utilizing advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Device Available
- EAS Guaranteed: 100%
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Drain-Source Voltage (VDS) | 30 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | |||
| Continuous Drain Current (ID@TC=25) | VGS @ 10V | 58 | A | ||
| Continuous Drain Current (ID@TC=100) | VGS @ 10V | 38 | A | ||
| Continuous Drain Current (ID@TA=25) | VGS @ 10V | 12 | A | ||
| Continuous Drain Current (ID@TA=70) | VGS @ 10V | 9.6 | A | ||
| Pulsed Drain Current (IDM) | 115 | A | |||
| Single Pulse Avalanche Energy (EAS) | 57.8 | mJ | |||
| Avalanche Current (IAS) | 34 | A | |||
| Total Power Dissipation (PD@TC=25) | 46 | W | |||
| Total Power Dissipation (PD@TA=25) | 2 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | |||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||
| Thermal Resistance Junction-Ambient (RJA) | --- | 62 | /W | ||
| Thermal Resistance Junction-Case (RJC) | --- | 2.7 | /W | ||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 30 | --- | --- | V |
| BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.027 | --- | V/ | |
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=10V , ID=30A | 6.5 | 8.5 | m | |
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=4.5V , ID=15A | 11 | 14 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 1.5 | 2.5 | V |
| VGS(th) Temperature Coefficient (VGS(th)) | -5.8 | --- | mV/ | ||
| Drain-Source Leakage Current (IDSS) | VDS=24V , VGS=0V , TJ=25 | --- | 1 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=24V , VGS=0V , TJ=55 | --- | 5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | 100 | nA | |
| Forward Transconductance (gfs) | VDS=5V , ID=30A | 38 | --- | S | |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | 1.7 | 2.9 | ||
| Total Gate Charge (Qg) (4.5V) | VDS=15V , VGS=4.5V , ID=15A | 12.6 | 17.6 | nC | |
| Gate-Source Charge (Qgs) | 4.2 | 5.9 | nC | ||
| Gate-Drain Charge (Qgd) | 5.1 | 7.1 | nC | ||
| Turn-On Delay Time (td(on)) | VDD=15V , VGS=10V , RG=3.3 , ID=15A | 4.6 | 9.2 | ns | |
| Rise Time (tr) | 12.2 | 22 | ns | ||
| Turn-Off Delay Time (td(off)) | 26.6 | 53 | ns | ||
| Fall Time (tf) | 8 | 16 | ns | ||
| Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | 1317 | 1844 | pF | |
| Output Capacitance (Coss) | 163 | 228 | pF | ||
| Reverse Transfer Capacitance (Crss) | 131 | 183 | pF | ||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | 58 | A | |
| Pulsed Source Current (ISM) | --- | 115 | A | ||
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | --- | 1 | V | |
| Reverse Recovery Time (trr) | IF=30A , dI/dt=100A/s , TJ=25 | 9.2 | --- | nS | |
| Reverse Recovery Charge (Qrr) | 2 | --- | nC |
Note: Data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper unless otherwise specified. Pulsed data has pulse width 300s, duty cycle 2%. EAS data shows Max. rating. Power dissipation is limited by 150 junction temperature.
Ordering Information:
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBA3004 | PRPAK5*6 | 3000/Tape&Reel |
2410121447_HUASHUO-HSBA3004_C2828500.pdf
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