Fast Switching N Channel MOSFET HUASHUO HSBB4054 Ideal for Synchronous Rectification and Power Systems
Key Attributes
Model Number:
HSBB4054
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
48pF
Number:
1 N-channel
Output Capacitance(Coss):
493pF
Input Capacitance(Ciss):
950pF
Pd - Power Dissipation:
27W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
HSBB4054
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB4054 is a N-Channel Fast Switching MOSFET designed for high-efficiency power applications. It features advanced trench technology, low gate charge, and is 100% UIS tested. Key applications include Switched-Mode Power Supplies (SMPS) for synchronous rectification, and DC/DC converters. Its fast switching capabilities and robust design make it suitable for demanding electronic systems.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced Trench Technology
- Testing: 100% UIS Tested
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current1 | 45 | A | |||
| ID@TC=100 | Continuous Drain Current1 | 31 | A | |||
| IDM | Pulsed Drain Current2 | 80 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 68 | mJ | |||
| IAS | Avalanche Current | 37 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 27 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient (Steady State)1 | --- | 60 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 4.5 | /W | ||
| Product Summary | ||||||
| Model | HSBB4054 | |||||
| VDS | 40 | V | ||||
| RDS(ON),typ | ID=45 A | 4.7 | m | |||
| ID | 45 | A | ||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=15A | 4.7 | 6.5 | m | |
| VGS=4.5V , ID=15A | 7.5 | 10.5 | V | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.9 | 2.2 | V |
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=32V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.9 | --- | ||
| Qg | Total Gate Charge | VDS=20V , VGS=10V , ID=15A | 20 | --- | nC | |
| Qgs | Gate-Source Charge | 3.5 | --- | |||
| Qgd | Gate-Drain Charge | 4.2 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=20V , VGS=10V , RG=3 ID=15A | 12 | --- | ns | |
| Tr | Rise Time | 9.6 | --- | |||
| Td(off) | Turn-Off Delay Time | 21 | --- | |||
| Tf | Fall Time | 16 | --- | |||
| Ciss | Input Capacitance | VDS=20V , VGS=0V , f=1MHz | 950 | --- | pF | |
| Coss | Output Capacitance | 493 | --- | |||
| Crss | Reverse Transfer Capacitance | 48 | --- | |||
| Diode Characteristics | ||||||
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 45 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSBB4054 | PRPAK3*3 | 3000/Tape&Reel | ||||
2410122026_HUASHUO-HSBB4054_C22359234.pdf
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