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quality N channel MOSFET HUASHUO HSH30N15A featuring trench technology and low gate charge for power supply designs factory
quality N channel MOSFET HUASHUO HSH30N15A featuring trench technology and low gate charge for power supply designs factory

N channel MOSFET HUASHUO HSH30N15A featuring trench technology and low gate charge for power supply designs

Key Attributes
Model Number: HSH30N15A
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
40mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
4pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
1.19nF@75V
Pd - Power Dissipation:
81W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
HSH30N15A
Package:
TO-263
Product Description

Product Overview

The HSH30N15A is a high-performance N-channel MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. These MOSFETs meet RoHS and Green Product requirements, are 100% EAS guaranteed, and have full function reliability approved. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.

Product Attributes

  • Brand: HSH-Semi
  • Product Type: N-Channel MOSFET
  • Technology: Trench
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS guaranteed, Full function reliability approved

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 150 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1 30 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1 18 A
ID@TA=25 Continuous Drain Current, VGS @ 10V1 4.9 A
ID@TA=70 Continuous Drain Current, VGS @ 10V1 3.9 A
IDM Pulsed Drain Current2 60 A
PD@TC=25 Total Power Dissipation3 81 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient --- 60 /W
RJC Thermal Resistance Junction-Case1 --- 1.2 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 150 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=10A 40 56 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 2.9 4 V
IDSS Drain-Source Leakage Current VDS=120V , VGS=0V , TJ=25 --- 1 uA
IDSS Drain-Source Leakage Current VDS=120V , VGS=0V , TJ=55 --- 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- 100 nA
gfs Forward Transconductance VDS=5V , ID=10A 25 --- S
Qg Total Gate Charge VDS=75V , VGS=10V , ID=10A 23 --- nC
Qgs Gate-Source Charge 5.8 ---
Qgd Gate-Drain Charge 4.2 ---
td(on) Turn-On Delay Time VDD=75V , VGS=10V , RG=3.3 , ID=10A 16 --- ns
tr Rise Time 18.6 ---
td(off) Turn-Off Delay Time 28.5 ---
tf Fall Time 6.5 ---
Ciss Input Capacitance VDS=75V , VGS=0V , f=1MHz 1190 --- pF
Coss Output Capacitance 73 ---
Crss Reverse Transfer Capacitance 4 ---
Diode Characteristics
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 --- 1.2 V
trr Reverse Recovery Time IF=10A , dI/dt=100A/s , TJ=25 45 --- ns
Qrr Reverse Recovery Charge 138 --- nC

2410121642_HUASHUO-HSH30N15A_C7543768.pdf
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