N channel MOSFET HUASHUO HSH3018B designed for synchronous buck converter circuits and fast switching
Key Attributes
Model Number:
HSH3018B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
205A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
525pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
187W
Input Capacitance(Ciss):
5.85nF@15V
Gate Charge(Qg):
56.9nC@10V
Mfr. Part #:
HSH3018B
Package:
TO-263
Product Description
Product Overview
The HSH3018B is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and low gate charge, contributing to efficient power conversion. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability.Product Attributes
- Brand: HS-Semi
- Product Type: N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSH3018B | Drain-Source Voltage (VDS) | 30 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID) | VGS @ 10V, TC=25 | 205 | A | |||
| Continuous Drain Current (ID) | VGS @ 10V, TC=100 | 145 | A | |||
| Pulsed Drain Current (IDM) | 500 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 246 | mJ | ||||
| Avalanche Current (IAS) | 70.2 | A | ||||
| Total Power Dissipation (PD) | TC=25 | 187 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | --- | --- | 62 | /W | ||
| Thermal Resistance Junction-Case (RJC) | --- | --- | 0.8 | /W | ||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=250uA | 30 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V, ID=30A | --- | 2 | 2.4 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V, ID=15A | --- | 2.6 | 3.2 | m | |
| Diode Characteristics | Continuous Source Current (IS) | VG=VD=0V, Force Current | --- | --- | 205 | A |
| Diode Forward Voltage (VSD) | VGS=0V, IS=1A, TJ=25 | --- | 1.2 | V |
2410121447_HUASHUO-HSH3018B_C2903574.pdf
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