High Current N Channel MOSFET HUAYI HY4903B Featuring Low Gate Charge and Halogen Free Construction
Key Attributes
Model Number:
HY4903B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
290A
Operating Temperature -:
-
RDS(on):
3mΩ@4.5V,145A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
762pF
Number:
1 N-channel
Output Capacitance(Coss):
1.236nF
Input Capacitance(Ciss):
11.506nF
Pd - Power Dissipation:
214W
Gate Charge(Qg):
-
Mfr. Part #:
HY4903B
Package:
TO-263-2L
Product Description
Product Overview
The HY4903P/B is a 290A N-Channel Enhancement Mode MOSFET featuring super low gate charge and advanced high cell density Trench technology. It offers excellent CdV/dt effect decline and is 100% EAS Guaranteed. This device is designed for high frequency synchronous buck converters in computer processor power and high frequency isolated DC-DC converters with synchronous rectification for telecom and industrial applications. It is available in TO-220FB-3L and TO-263-2L packages and is Halogen-Free.
Product Attributes
- Brand: HOOYI
- Origin: China
- Certifications: RoHS compliant, Halogen-Free
Technical Specifications
| Model | Package | V/RDS(ON) (typ.) @ VGS=10V | VDSS | VGSS | ID Continuous Drain Current @ TC=100C | PD Maximum Power Dissipation @ Tc=100C | EAS Avalanche Energy, Single Pulsed | BVDSS | IDSS @ TJ=85C | VGS(th) | RDS(ON) @ VGS=10V, IDS=145A | VSD @ ISD=145A | trr | qrr | Qg | Qgs | Qgd | RG | Ciss | Coss | Crss |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HY4903P/B | TO-220FB-3L | 1.6m | - | 20 V | 290A | 120W | 762mJ | - | 30A | 1.0 - 3.0 V | 1.6 m | - 0.8 V | - | - | - | - | - | - 0.5 | - | - | - |
| HY4903P/B | TO-263-2L | 1.6m | - | 20 V | 290A | 120W | 762mJ | - | 30A | 1.0 - 3.0 V | 1.6 m | - 0.8 V | - | - | - | - | - | - 0.5 | - | - | - |
2410121903_HUAYI-HY4903B_C133394.pdf
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