HUASHUO HSU3103 30V P channel MOSFET offering low RDS ON and high reliability for advanced power supply designs
Key Attributes
Model Number:
HSU3103
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
158pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.345nF@15V
Pd - Power Dissipation:
34.7W
Gate Charge(Qg):
12.5nC@4.5V
Mfr. Part #:
HSU3103
Package:
TO-252-2
Product Description
Product Overview
The HSU3103 is a P-channel 30V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Ch MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSU3103 | Drain-Source Voltage (VDS) | -30 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| Continuous Drain Current, VGS @ -10V | TC=25 | -35 | A | |||
| Continuous Drain Current, VGS @ -10V | TC=100 | -22 | A | |||
| Continuous Drain Current, VGS @ -10V | TA=25 | -13.4 / -8.5 | A | |||
| Continuous Drain Current, VGS @ -10V | TA=70 | -10.7 / -6.8 | A | |||
| Pulsed Drain Current (IDM) | -70 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 72.2 | mJ | ||||
| Avalanche Current (IAS) | -38 | A | ||||
| Total Power Dissipation (PD) | TC=25 | 34.7 | W | |||
| Total Power Dissipation (PD) | TA=25 | 2 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -30 | V | |||
| HSU3103 | Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V , ID=-15A | 20 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V , ID=-10A | 32 | m | |||
| HSU3103 | Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | |||
| HSU3103 | Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | ±100 | nA | ||
| Forward Transconductance (gfs) | VDS=-5V , ID=-10A | 5 | S | |||
| HSU3103 | Total Gate Charge (Qg) | VDS=-15V , VGS=-4.5V , ID=-15A | 12.5 | nC | ||
| Gate-Source Charge (Qgs) | 5.4 | nC | ||||
| Gate-Drain Charge (Qgd) | 5 | nC | ||||
| HSU3103 | Turn-On Delay Time (td(on)) | VDD=-15V , VGS=-10V , RG=3.3, ID=-15A | 4.4 | ns | ||
| Rise Time (tr) | 11.2 | ns | ||||
| Turn-Off Delay Time (td(off)) | 34 | ns | ||||
| Fall Time (tf) | 18 | ns | ||||
| HSU3103 | Input Capacitance (Ciss) | VDS=-15V , VGS=0V , f=1MHz | 1345 | pF | ||
| Output Capacitance (Coss) | 194 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 158 | pF | ||||
| HSU3103 | Continuous Source Current (IS) | VG=VD=0V , Force Current | -35 | A | ||
| Pulsed Source Current (ISM) | -70 | A | ||||
| HSU3103 | Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Reverse Recovery Time (trr) | IF=-15A , dI/dt=100A/s , TJ=25 | 12.4 | nS | |||
| HSU3103 | Reverse Recovery Charge (Qrr) | 5 | nC | |||
| HSU3103 | Thermal Resistance Junction-Ambient (RJA) | 1 (t ≤10s) | 25 | /W | ||
| HSU3103 | Thermal Resistance Junction-Case (RJC) | 1 | 3.6 | /W | ||
| HSU3103 | Package | TO252-2 | ||||
| HSU3103 | Packaging | 2500/Tape&Reel |
2410121456_HUASHUO-HSU3103_C701013.pdf
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