Fast switching N channel MOSFET HUASHUO HSS3N06 with advanced trench technology and low gate charge
Key Attributes
Model Number:
HSS3N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
95mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
11pF
Number:
1 N-channel
Output Capacitance(Coss):
28pF
Input Capacitance(Ciss):
260pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
5.6nC@10V
Mfr. Part #:
HSS3N06
Package:
SOT-23L
Product Description
Product Overview
The HSS3N06 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and features super low gate charge and excellent CdV/dt effect decline due to its advanced high cell density trench technology.Product Attributes
- Brand: HS-Semi
- Technology: Trench MOSFET
- Certifications: RoHS, Green Product
- Device Type: N-Channel
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 3.2 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 2.4 | A | |||
| IDM | Pulsed Drain Current2 | 12.5 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.4 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 125 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 80 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=3A | 75 | 95 | m | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=2A | 90 | 110 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.6 | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| Qg | Total Gate Charge (10V) | VDS=30V , VGS=10V , ID=2A | 5.6 | --- | nC | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | 3.2 | A | |
| ISM | Pulsed Source Current2,4 | --- | 12.5 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSS3N06 | SOT-23 | 3000/Tape&Reel | ||||
2410121447_HUASHUO-HSS3N06_C22359216.pdf
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