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quality Fast Switching MOSFET HUASHUO IRLML2502 with Low Gate Charge and Excellent CdVdt Characteristics factory
quality Fast Switching MOSFET HUASHUO IRLML2502 with Low Gate Charge and Excellent CdVdt Characteristics factory

Fast Switching MOSFET HUASHUO IRLML2502 with Low Gate Charge and Excellent CdVdt Characteristics

Key Attributes
Model Number: IRLML2502
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
35pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
310pF@15V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
4.6nC@4.5V
Mfr. Part #:
IRLML2502
Package:
SOT-23
Product Description

Product Overview

The IRLML2502 is a high cell density trenched N-channel MOSFET designed for fast switching and excellent RDS(ON) in low-power switching and load switch applications. It meets RoHS and Green Product requirements, offering super low gate charge and excellent Cdv/dt effect decline due to its advanced high cell density Trench technology. This MOSFET is suitable for applications requiring efficient power management.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Ch Fast Switching MOSFETs
  • Technology: Advanced high cell density Trench technology
  • Certifications: RoHS, Green Product
  • Packaging: SOT-23
  • Packaging Option: 3000/Tape&Reel

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage 12 V
ID@TA=25 Continuous Drain Current, VGS @ 4.5V1 3.6 A
ID@TA=70 Continuous Drain Current, VGS @ 4.5V1 2.8 A
IDM Pulsed Drain Current2 14.4 A
PD@TA=25 Total Power Dissipation3 1 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient1 --- 125 /W
RJC Thermal Resistance Junction-Case1 --- 80 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 20 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V , ID=3A 30 50 m
VGS=2.5V , ID=2A 40 70 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.4 --- 1.2 V
IDSS Drain-Source Leakage Current VDS=16V , VGS=0V , TJ=25 --- 1 uA
VDS=16V , VGS=0V , TJ=55 --- 5 uA
IGSS Gate-Source Leakage Current VGS=12V , VDS=0V --- 100 nA
gfs Forward Transconductance VDS=5V , ID=3A 10.5 --- S
Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=3A 4.6 --- nC
Qgs Gate-Source Charge 0.7 ---
Qgd Gate-Drain Charge 1.5 ---
Td(on) Turn-On Delay Time VDD=10V , VGS=4.5V , RG=3.3 ID=3A 1.6 --- ns
Tr Rise Time 42 --- ns
Td(off) Turn-Off Delay Time 14 --- ns
Tf Fall Time 7 --- ns
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz 310 --- pF
Coss Output Capacitance 49 --- pF
Crss Reverse Transfer Capacitance 35 --- pF
Diode Characteristics
IS Continuous Source Current1,4 VG=VD=0V , Force Current --- 3.6 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 --- 1.2 V

Notes:

  • 1 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
  • 2 The data tested by pulsed, pulse width 300s, duty cycle 2%.
  • 3 The power dissipation is limited by 150 junction temperature.
  • 4 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

2410121641_HUASHUO-IRLML2502_C518800.pdf
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