Trenched N channel MOSFET HUASHUO HSS2312 optimized for power switching and load switch applications
Key Attributes
Model Number:
HSS2312
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
100pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
900pF@10V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
12nC@4.5V
Mfr. Part #:
HSS2312
Package:
SOT-23L
Product Description
Product Overview
The HSS2312 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approved. Key features include super low gate charge and excellent Cdv/dt effect decline, leveraging advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSS2312 | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 20 | -- | -- | V |
| BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | -- | 0.018 | -- | V/ | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=6A | -- | 15 | 20 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=2.5V , ID=5A | -- | 19 | 28 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 0.5 | 0.7 | 1.0 | V | |
| VGS(th) Temperature Coefficient | -- | -- | -3.1 | -- | mV/ | |
| Drain-Source Leakage Current (IDSS) | VDS=16V , VGS=0V , TJ=25 | -- | -- | 1 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=16V , VGS=0V , TJ=55 | -- | -- | 5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=12V , VDS=0V | -- | -- | 100 | nA | |
| Forward Transconductance (gfs) | VDS=5V , ID=4A | -- | 10 | -- | S | |
| Total Gate Charge (Qg) (4.5V) | VDS=15V , VGS=4.5V , ID=4A | -- | 12 | -- | nC | |
| Gate-Source Charge (Qgs) | -- | -- | 2.4 | -- | nC | |
| Gate-Drain Charge (Qgd) | -- | -- | 1.1 | -- | nC | |
| Input Capacitance (Ciss) | VDS=10V , VGS=0V , f=1MHz | -- | 900 | -- | pF | |
| Output Capacitance (Coss) | VDS=10V , VGS=0V , f=1MHz | -- | 220 | -- | pF | |
| HSS2312 | Reverse Transfer Capacitance (Crss) | VDS=10V , VGS=0V , f=1MHz | -- | 100 | -- | pF |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | -- | -- | 1.2 | V | |
| Absolute Maximum Ratings | Drain-Source Voltage (VDS) | -- | -- | -- | 20 | V |
| Gate-Source Voltage (VGS) | -- | -- | -- | 12 | V | |
| Continuous Drain Current (ID@TA=25) | VGS @ 4.5V | -- | -- | 6 | A | |
| Absolute Maximum Ratings | Continuous Drain Current (ID@TA=70) | VGS @ 4.5V | -- | -- | 5 | A |
| Pulsed Drain Current (IDM) | -- | -- | -- | 24 | A | |
| Total Power Dissipation (PD@TA=25) | -- | -- | -- | 1.4 | W | |
| Absolute Maximum Ratings | Total Power Dissipation (PD@TA=70) | -- | -- | -- | 0.9 | W |
| Storage Temperature Range (TSTG) | -- | -55 | -- | 150 | ||
| Absolute Maximum Ratings | Operating Junction Temperature Range (TJ) | -- | -55 | -- | 150 | |
| Thermal Data | Thermal Resistance Junction-ambient (RJA) | 1 | -- | 90 | -- | /W |
| Continuous Source Current (IS) | VG=VD=0V , Force Current | -- | -- | 6 | A | |
| Pulsed Source Current (ISM) | -- | -- | -- | 24 | A |
2410121653_HUASHUO-HSS2312_C2903555.pdf
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