High Cell Density Trench N Channel MOSFET HUASHUO HSU80N03 Featuring RoHS Compliance and Performance
Key Attributes
Model Number:
HSU80N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.9mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
280pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.29nF@25V
Pd - Power Dissipation:
115W
Gate Charge(Qg):
-
Mfr. Part #:
HSU80N03
Package:
TO-252-2
Product Description
Product Overview
The HSU80N03 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. It meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers full function reliability. Key features include super low gate charge and excellent CdV/dt effect decline, enabled by advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Switching Speed: Fast Switching
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full function reliability approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 80 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 57 | A | |||
| IDM | Pulsed Drain Current2 | 320 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 300 | mJ | |||
| PD@TC=25 | Total Power Dissipation4 | 115 | W | |||
| PD@TA=25 | Total Power Dissipation4 | 2.4 | W | |||
| TSTG | Storage Temperature Range | -55 | 175 | |||
| TJ | Operating Junction Temperature Range | -55 | 175 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient (Steady State)1 | --- | 50 | /W | ||
| RJA | Thermal Resistance Junction-Ambient 1 (t ≤10s) | --- | 25 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 0.8 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.028 | --- | V/ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=30A | 4.9 | 6 | mΩ | |
| VGS=4.5V , ID=15A | 7.5 | 10 | mΩ | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.8 | 3 | V |
| VGS=VDS , ID =250uA | ||||||
| ΔVGS(th)/ΔTJ | VGS(th) Temperature Coefficient | -6.16 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | 1 | µA | |
| VDS=24V , VGS=0V , TJ=55 | --- | 5 | µA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=30A | 20 | --- | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.7 | 3.4 | Ω | |
| VDS=0V , VGS=0V , f=1MHz | ||||||
| Qg | Total Gate Charge (4.5V) | VDS=30V , VGS=10V , ID=40A | 84 | --- | nC | |
| VDS=30V , VGS=10V , ID=40A | ||||||
| VDS=30V , VGS=10V , ID=40A | ||||||
| Qgs | Gate-Source Charge | 14 | --- | nC | ||
| Qgd | Gate-Drain Charge | 30 | --- | nC | ||
| Switching Time | Td(on) Turn-On Delay Time | VDD=30V , VGS=10V , RG=3Ω ID=40A | 20 | --- | ns | |
| Tr Rise Time | VDD=30V , VGS=10V , RG=3Ω ID=40A | 15 | --- | ns | ||
| Td(off) Turn-Off Delay Time | VDD=30V , VGS=10V , RG=3Ω ID=40A | 50 | --- | ns | ||
| Tf Fall Time | VDD=30V , VGS=10V , RG=3Ω ID=40A | 8 | --- | ns | ||
| Capacitance | Ciss Input Capacitance | VDS=25V , VGS=0V , f=1MHz | 2290 | --- | pF | |
| Coss Output Capacitance | VDS=25V , VGS=0V , f=1MHz | 360 | --- | pF | ||
| Crss Reverse Transfer Capacitance | VDS=25V , VGS=0V , f=1MHz | 280 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 80 | A | |
| ISM | Pulsed Source Current2,5 | --- | 160 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1 | V | |
| Diode Recovery | trr Reverse Recovery Time | IF=40A , dI/dt=100A/µs , TJ=25 | 32 | --- | nS | |
| Qrr Reverse Recovery Charge | IF=40A , dI/dt=100A/µs , TJ=25 | 60 | --- | nC | ||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSU80N03 | TO252-2 | 2500/Tape&Reel | ||||
Notes:
1 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3 The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=53.8A.
4 The power dissipation is limited by 175 junction temperature.
5 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410121525_HUASHUO-HSU80N03_C508795.pdf
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