N channel MOSFET HUASHUO HSCE2530 featuring high cell density trench technology and low RDSON for power conversion
Key Attributes
Model Number:
HSCE2530
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
321pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
4.307nF@10V
Pd - Power Dissipation:
83W
Gate Charge(Qg):
77nC@10V
Mfr. Part #:
HSCE2530
Package:
DFN3.3x3.3-8
Product Description
Product Overview
The HSCE2530 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approved. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Channel MOSFET
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full function reliability approved
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSCE2530 | Drain-Source Voltage (VDS) | 20 | V | |||
| Gate-Source Voltage (VGS) | ±12 | V | ||||
| Continuous Drain Current (ID@TC=25) | 50 | A | ||||
| Continuous Drain Current (ID@TC=100) | 39 | A | ||||
| Pulsed Drain Current (IDM) | 200 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 80 | mJ | ||||
| Avalanche Current (IAS) | 40 | A | ||||
| Total Power Dissipation (PD@TC=25) | 83 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA) (Steady State) | 55 | /W | ||||
| Thermal Resistance Junction-case (RJC) | 1.5 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 20 | V | |||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=4.5V , ID=20A | 1.5 | 2 | m | ||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=2.5V , ID=20A | 1.4 | 2 | 2.7 | m | |
| HSCE2530 | Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 0.4 | 1.0 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=16V , VGS=0V , TJ=25 | 1 | uA | |||
| Drain-Source Leakage Current (IDSS) | VDS=16V , VGS=0V , TJ=125 | 5 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=±10V , VDS=0V | ±10 | uA | |||
| Total Gate Charge (Qg) (10V) | VDS=15V , VGS=10V , ID=20A | 77 | nC | |||
| Gate-Source Charge (Qgs) | 8.7 | nC | ||||
| Gate-Drain Charge (Qgd) | 14 | nC | ||||
| Turn-On Delay Time (Td(on)) | VDD=15V , VGS=10V , RG=3, ID=20A | 10.2 | ns | |||
| Rise Time (Tr) | 11.7 | ns | ||||
| Turn-Off Delay Time (Td(off)) | 56.4 | ns | ||||
| HSCE2530 | Fall Time (Tf) | 16.2 | ns | |||
| Input Capacitance (Ciss) | VDS=10V , VGS=0V , f=1MHz | 4307 | pF | |||
| Output Capacitance (Coss) | 501 | pF | ||||
| HSCE2530 | Reverse Transfer Capacitance (Crss) | 321 | pF | |||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | 50 | A | |||
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | 1.2 | V | |||
| HSCE2530 | Reverse Recovery Time (trr) | IF=20A , di/dt=100A/µs , TJ=25 | 22 | nS | ||
| Reverse Recovery Charge (Qrr) | 72 | nC |
| Package Type | Symbol | Dimensions (mm) | Dimensions (inches) |
|---|---|---|---|
| DFN3.3x3.3 8L | A | 0.70 - 0.80 | 0.028 - 0.031 |
| A2 | 0.00 - 0.05 | 0.000 - 0.002 | |
| B | 0.24 - 0.35 | 0.009 - 0.014 | |
| C | 0.10 - 0.25 | 0.004 - 0.010 | |
| D | 3.15 - 3.40 | 0.124 - 0.134 | |
| E | 3.15 - 3.40 | 0.124 - 0.134 | |
| E2 | 2.15 - 2.35 | 0.085 - 0.093 | |
| L | 0.35 - 0.45 | 0.014 - 0.018 | |
| N | 2.10 - 2.35 | 0.083 - 0.093 | |
| e | 0.65 | 0.026 |
2409292104_HUASHUO-HSCE2530_C701041.pdf
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