Fast switching P channel mosfet HUASHUO HSCB10P02 with trench technology and performance in power circuits
Key Attributes
Model Number:
HSCB10P02
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
584pF
Number:
1 P-Channel
Output Capacitance(Coss):
689pF
Input Capacitance(Ciss):
2.65nF
Pd - Power Dissipation:
3.5W
Gate Charge(Qg):
32nC@4.5V
Mfr. Part #:
HSCB10P02
Package:
DFN2x2-6L
Product Description
Product Overview
The HSCB10P02 is a P-channel, 20V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS Semi
- Product Type: P-Ch MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSCB10P02 | Drain-Source Voltage (VDS) | -20 | V | |||
| Gate-Source Voltage (VGS) | 12 | V | ||||
| Continuous Drain Current, ID@TA=25 | VGS @ -4.5V | -10 | A | |||
| Continuous Drain Current, ID@TA=70 | VGS @ -4.5V | -8 | A | |||
| Pulsed Drain Current (IDM) | -21 | A | ||||
| Total Power Dissipation (PD@TA=25) | 3.5 | W | ||||
| Total Power Dissipation (PD@TA=70) | 2.2 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | 36 | /W | ||||
| Thermal Resistance Junction-Ambient (RJC) | 6.5 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -20 | V | |||
| Static Drain-Source On-Resistance (RDS(ON),typ) | VGS=-4.5V , ID=-8A | 20 | 25 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-2.5V , ID=-6A | 25 | 30 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -0.4 | -0.6 | -1.0 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=-16V , VGS=0V , TJ=25 | -1 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=12V , VDS=0V | 100 | nA | |||
| Total Gate Charge (Qg) | VDS=-10V , VGS=-4.5V , ID=-5A | 32 | nC | |||
| Input Capacitance (Ciss) | VDS=-10V , VGS=0V , f=1MHz | 2650 | pF | |||
| Output Capacitance (Coss) | 689 | |||||
| Reverse Transfer Capacitance (Crss) | 584 | |||||
| Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | -1.0 | V |
2410122017_HUASHUO-HSCB10P02_C28314515.pdf
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