n channel mosfet huashuo hsu4094 featuring advanced trench technology for power management in smps and dc dc converters
Key Attributes
Model Number:
HSU4094
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
114A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.2mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
71pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
2.65nF@20V
Pd - Power Dissipation:
74W
Gate Charge(Qg):
22.7nC@4.5V
Mfr. Part #:
HSU4094
Package:
TO-252-2
Product Description
Product Overview
The HSU4094 is a fast-switching N-channel MOSFET designed for high-current applications. Featuring advanced trench technology, it offers low gate charge and high current capability, making it suitable for synchronous rectification in SMPS, DC/DC converters, and Or-ing circuits. This MOSFET is 100% UIS and EAS tested, RoHS and Halogen-Free compliant, and guaranteed for 100% EAS.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced Trench Technology
- Certifications: RoHS and Halogen-Free Compliant
- Testing: 100% UIS Tested, 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1,6 | 114 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1,6 | 72 | A | |||
| IDM | Pulsed Drain Current2 | 240 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 145 | mJ | |||
| IAS | Avalanche Current | 54 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 74 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 55 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 1.7 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | 2.5 | 3.2 | m | |
| VGS=4.5V , ID=15A | 3.8 | 5.3 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.2 | V |
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=32V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=20A | 75 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.5 | --- | ||
| Qg | Total Gate Charge (4.5V) | VDS=20V , VGS=4.5V , ID=20A | 22.7 | --- | nC | |
| Qgs | Gate-Source Charge | 7.5 | --- | nC | ||
| Qgd | Gate-Drain Charge | 5.5 | --- | nC | ||
| Td(on) | Turn-On Delay Time | VDD=20V , VGS=10V , RG=3, ID=20A | 10 | --- | ns | |
| Tr | Rise Time | 5 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 33 | --- | ns | ||
| Tf | Fall Time | 6.5 | --- | ns | ||
| Ciss | Input Capacitance | VDS=20V , VGS=0V , f=1MHz | 2650 | --- | pF | |
| Coss | Output Capacitance | 899 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 71 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,6 | VG=VD=0V , Force Current | --- | 114 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1 | V | |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSU4094 | TO252-2 | 2500/Tape&Reel | ||||
Notes:
- 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2. The data tested by pulsed, pulse width ≤ 300us, duty cycle ≤ 2%.
- 3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.5mH, IAS=54A.
- 4. The power dissipation is limited by 150 junction temperature.
- 5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
- 6. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2410121656_HUASHUO-HSU4094_C701004.pdf
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