Dual P channel mosfet HSW6815 featuring fast switching and 20V drain source voltage for load switch
Key Attributes
Model Number:
HSW6815
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
94pF
Number:
2 P-Channel
Output Capacitance(Coss):
104pF
Input Capacitance(Ciss):
680pF
Pd - Power Dissipation:
750mW
Gate Charge(Qg):
6.4nC@4.5V
Mfr. Part #:
HSW6815
Package:
SOT-23-6L
Product Description
Product Overview
The HSW6815 is a dual P-channel, 20V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. The HSW6815 meets RoHS and Green Product requirements and features super low gate charge and excellent Cdv/dt effect decline. It is available as a Green Device.
Product Attributes
- Brand: HSW
- Product Type: Dual P-Channel MOSFET
- Certifications: RoHS, Green Product
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSW6815 | Drain-Source Voltage (VDS) | -20 | V | |||
| Gate-Source Voltage (VGS) | 12 | V | ||||
| Continuous Drain Current (ID) | VGS @ -4.5V, TA=25 | -4 | A | |||
| Continuous Drain Current (ID) | VGS @ -4.5V, TA=70 | -3.1 | A | |||
| Pulsed Drain Current (IDM) | -16 | A | ||||
| Total Power Dissipation (PD) | TA=25 | 0.75 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA) | --- | 140 | /W | |||
| Thermal Resistance Junction-Case (RJC) | --- | 65 | /W | |||
| Electrical Characteristics | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -20 | --- | --- | V |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V , ID=-4A | 38 | 45 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-2.5V , ID=-3A | 52 | 65 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -0.4 | -0.7 | -1.0 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=-16V , VGS=0V , TJ=25 | --- | -1 | uA | ||
| Gate-Source Leakage Current (IGSS) | VGS=12V , VDS=0V | --- | 100 | nA | ||
| Total Gate Charge (Qg) | VDS=-10V , VGS=-4.5V , ID=-2A | 6.4 | --- | nC | ||
| Diode Characteristics | Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | -4 | A | |
| Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | --- | -1.2 | V | ||
| Input Capacitance (Ciss) | VDS=-10V , VGS=0V , f=1MHz | 680 | --- | pF | ||
| Output Capacitance (Coss) | 104 | --- | pF | |||
| Reverse Transfer Capacitance (Crss) | 94 | --- | pF |
2410122017_HUASHUO-HSW6815_C28314508.pdf
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