Power Management N Channel MOSFET HUASHUO HSBA3058 with Fast Switching and Green Device Availability

Name: Power Management N Channel MOSFET HUASHUO HSBA3058 with Fast Switching and Green Device Availability
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: HSBA3058
Availability: InStock

Key Attributes

Model Number: HSBA3058

Product Custom Attributes

Drain To Source Voltage:

30V

Current - Continuous Drain(Id):

30A

Operating Temperature -:

-55℃~+150℃

RDS(on):

8mΩ@10V,20A

Gate Threshold Voltage (Vgs(th)):

1.2V

Reverse Transfer Capacitance (Crss@Vds):

34pF@15V

Number:

1 N-channel

Input Capacitance(Ciss):

693pF@15V

Pd - Power Dissipation:

31W

Gate Charge(Qg):

7.1nC@4.5V

Mfr. Part #:

HSBA3058

Package:

PRPAK5x6-8L

Product Description

Product Overview

The HSBA3058 is a high-performance N-Channel Fast Switching MOSFET designed for demanding power management applications. Featuring a 30V drain-source voltage and fast switching capabilities, it is ideal for use in desktop computer power management, DC/DC converters, and isolated DC/DC converters for telecom and industrial sectors. This device offers 100% EAS guaranteed performance, a super low gate charge, and excellent CdV/dt effect decline due to its advanced high cell density Trench technology. It is also available as a Green Device.

Product Attributes

Brand: HS-Semi
Device Type: N-Channel MOSFET
Technology: Trench
Availability: Green Device Available

Technical Specifications

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
VDS	Drain-Source Voltage				30	V
VGS	Gate-Source Voltage				20	V
ID@TC=25	Continuous Drain Current, VGS @ 10V¹				30	A
ID@TC=100	Continuous Drain Current, VGS @ 10V¹				25	A
IDM	Pulsed Drain Current²				140	A
EAS	Single Pulse Avalanche Energy³				39	mJ
IAS	Avalanche Current				28	A
PD@TC=25	Total Power Dissipation⁴				31	W
TSTG	Storage Temperature Range		-55		150
TJ	Operating Junction Temperature Range		-55		150
Thermal Data
RJA	Thermal Resistance Junction-Ambient			---	60	/W
RJC	Thermal Resistance Junction-Case¹			---	4	/W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	30	---	---	V
RDS(ON)	Static Drain-Source On-Resistance²	VGS=10V , ID=20A		6	8	m
		VGS=4.5V , ID=20A		9.4	11	m
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.2	1.7	2.2	V
IDSS	Drain-Source Leakage Current	VDS=24V , VGS=0V , TJ=25		---	1	uA
		VDS=24V , VGS=0V , TJ=55		---	5	uA
IGSS	Gate-Source Leakage Current	VGS=20V , VDS=0V		---	100	nA
Qg	Total Gate Charge (4.5V)	VDS=15V , VGS=10V , ID=20A		7.1	---	nC
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz		693	---	pF
Coss	Output Capacitance	VDS=15V , VGS=0V , f=1MHz		332	---	pF
Crss	Reverse Transfer Capacitance	VDS=15V , VGS=0V , f=1MHz		34	---	pF
Diode Characteristics
IS	Continuous Source Current^1,5	VG=VD=0V , Force Current		---	30	A
VSD	Diode Forward Voltage²	VGS=0V , IS=1A , TJ=25		---	1	V

Applications

Power Management in Desktop Computer or DC/DC Converters
Isolated DC/DC Converters in Telecom and Industrial.

Features

100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench technology

Ordering Information

Part Number	Package Code	Packaging
HSBA3058	PRPAK5*6	3000/Tape&Reel

2410121503_HUASHUO-HSBA3058_C701047.pdf

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