N Channel MOSFET HUASHUO HSBB3056 30V Fast Switching with Low Gate Charge and Enhanced CdV dt Effect
Key Attributes
Model Number:
HSBB3056
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
3.2mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
70pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.476nF@15V
Pd - Power Dissipation:
27W
Gate Charge(Qg):
14.6nC@4.5V
Mfr. Part #:
HSBB3056
Package:
PRPAK3x3-8L
Product Description
HSBB3056 N-Channel 30V Fast Switching MOSFETs
Product Overview
The HSBB3056 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. It is available as a Green Device and features super low gate charge with excellent CdV/dt effect decline due to its advanced high cell density trench technology.Product Attributes
- Brand: HS-Semi
- Type: N-Channel MOSFET
- Voltage Rating: 30V
- Switching Speed: Fast Switching
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product, 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V1 | 35 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V1 | 32 | A | |||
| IDM | Pulsed Drain Current2 | 120 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 80 | mJ | |||
| IAS | Avalanche Current | 40 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 27 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 60 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 4.5 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.021 | --- | V/ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | 3.2 | 3.9 | mΩ | |
| VGS=4.5V , ID=15A | 4.9 | 6.1 | VGS | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.7 | 2.2 | V |
| ΔVGS(th) | VGS(th) Temperature Coefficient | -5.73 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | 1 | µA | |
| VDS=24V , VGS=0V , TJ=55 | --- | 5 | ||||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=20A | 75 | --- | S | |
| Rg | Gate Resistance | VDS=10V , VGS=0V , f=1MHz | 0.7 | 2.6 | Ω | |
| Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=20A | 14.6 | --- | nC | |
| Qgs | Gate-Source Charge | 5.8 | --- | |||
| Qgd | Gate-Drain Charge | 3.5 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3Ω, ID=20A | 7.5 | --- | ns | |
| Tr | Rise Time | 20.1 | --- | |||
| Td(off) | Turn-Off Delay Time | 21.6 | --- | |||
| Tf | Fall Time | 4.4 | --- | |||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 1476 | --- | pF | |
| Coss | Output Capacitance | 556 | --- | |||
| Crss | Reverse Transfer Capacitance | 70 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 30 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1 | V | |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBB3056 | PRPAK3*3 | 3000/Tape&Reel |
2410121517_HUASHUO-HSBB3056_C701030.pdf
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